Part Details for MG25J6ES1 by Toshiba America Electronic Components
Overview of MG25J6ES1 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Part Details for MG25J6ES1
MG25J6ES1 CAD Models
MG25J6ES1 Part Data Attributes:
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MG25J6ES1
Toshiba America Electronic Components
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Datasheet
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MG25J6ES1
Toshiba America Electronic Components
TRANSISTOR 25 A, 600 V, N-CHANNEL IGBT, 2-72A4A, 17 PIN, Insulated Gate BIP Transistor
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-PUFM-D17 | |
| Pin Count | 17 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 25 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-PUFM-D17 | |
| Number of Elements | 6 | |
| Number of Terminals | 17 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | SOLDER LUG | |
| Terminal Position | UPPER | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 500 ns | |
| Turn-on Time-Nom (ton) | 400 ns |
Alternate Parts for MG25J6ES1
This table gives cross-reference parts and alternative options found for MG25J6ES1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG25J6ES1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MG30J6ES50 | TRANSISTOR 30 A, 600 V, N-CHANNEL IGBT, 2-72A5A, 21 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG25J6ES1 vs MG30J6ES50 |
| MWI30-06A7 | Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, SIXPACK-17 | Littelfuse Inc | MG25J6ES1 vs MWI30-06A7 |
| 6MBI30FA-060 | Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, M603, 11 PIN | Fuji Electric Co Ltd | MG25J6ES1 vs 6MBI30FA-060 |
| 6MBI30F-060 | Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, M607, 17 PIN | Fuji Electric Co Ltd | MG25J6ES1 vs 6MBI30F-060 |
| CM30TF-12H | Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | MG25J6ES1 vs CM30TF-12H |