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Memory / DRAMs / MD51V64165E-50TA
Datasheets
MD51V64165E-50TA by: LAPIS Semiconductor Co Ltd

Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50

Part Details for MD51V64165E-50TA by LAPIS Semiconductor Co Ltd

Overview of MD51V64165E-50TA by LAPIS Semiconductor Co Ltd

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Available Datasheets

Part # Manufacturer Description Datasheet
2SC4815(0)-T-AZ Renesas Electronics Corporation Bipolar Power Transistors
2SK1850-T-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet

Part Details for MD51V64165E-50TA

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MD51V64165E-50TA Part Data Attributes

Parametric Data
MD51V64165E-50TA LAPIS Semiconductor Co Ltd
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MD51V64165E-50TA LAPIS Semiconductor Co Ltd Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50
Part Life Cycle Code Obsolete
Ihs Manufacturer LAPIS SEMICONDUCTOR CO LTD
Part Package Code TSOP2
Package Description SOP, TSOP50,.46,32
Pin Count 50
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 50 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O Type COMMON
JESD-30 Code R-PDSO-G50
Memory Density 67108864 bit
Memory IC Type FAST PAGE DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code SOP
Package Equivalence Code TSOP50,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Refresh Cycles 8192
Self Refresh NO
Standby Current-Max 0.0005 A
Supply Current-Max 0.14 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL

Alternate Parts for MD51V64165E-50TA

This table gives cross-reference parts and alternative options found for MD51V64165E-50TA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MD51V64165E-50TA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HY51V65163HGT-5 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 SK Hynix Inc MD51V64165E-50TA vs HY51V65163HGT-5
GM71V65163CLT-5 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 SK Hynix Inc MD51V64165E-50TA vs GM71V65163CLT-5
K4E641612C-TL500 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor MD51V64165E-50TA vs K4E641612C-TL500
KM416V4104CT-L5 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor MD51V64165E-50TA vs KM416V4104CT-L5
K4E661612D-TC50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor MD51V64165E-50TA vs K4E661612D-TC50
HM5165165TT-5 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Hitachi Ltd MD51V64165E-50TA vs HM5165165TT-5
KM416V4104BS-L5 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor MD51V64165E-50TA vs KM416V4104BS-L5
TMS465169-50DGE 4MX16 EDO DRAM, 50ns, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Texas Instruments MD51V64165E-50TA vs TMS465169-50DGE
UPD4264165G5-A50 4MX16 EDO DRAM, 50ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Renesas Electronics Corporation MD51V64165E-50TA vs UPD4264165G5-A50
HYB3164165BTL-50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Siemens MD51V64165E-50TA vs HYB3164165BTL-50
Part Number Description Manufacturer Compare
UPD4265165G5-A60 IC,DRAM,EDO,4MX16,CMOS,TSOP,50PIN,PLASTIC Renesas Electronics Corporation MD51V64165E-50TA vs UPD4265165G5-A60
K4F661611B-TC50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor MD51V64165E-50TA vs K4F661611B-TC50
KM416V4000C-SL5 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor MD51V64165E-50TA vs KM416V4000C-SL5
KM416V4104AS-7 EDO DRAM, 4MX16, 70ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor MD51V64165E-50TA vs KM416V4104AS-7
K4E641611B-TC500 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor MD51V64165E-50TA vs K4E641611B-TC500
K4F641612C-TL50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor MD51V64165E-50TA vs K4F641612C-TL50
KM416V4004BS-45 EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor MD51V64165E-50TA vs KM416V4004BS-45
K4F641612C-TL450 Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor MD51V64165E-50TA vs K4F641612C-TL450
M5M465165BTP-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO44, 0.400 INCH, TSOP-50/44 Mitsubishi Electric MD51V64165E-50TA vs M5M465165BTP-6
HYB3166165AT-40 EDO DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Infineon Technologies AG MD51V64165E-50TA vs HYB3166165AT-40

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