Datasheets
MCB85N06Y-TP by: Micro Commercial Components

Power Field-Effect Transistor,

Part Details for MCB85N06Y-TP by Micro Commercial Components

Overview of MCB85N06Y-TP by Micro Commercial Components

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for MCB85N06Y-TP

Part # Distributor Description Stock Price Buy
DISTI # 353-MCB85N06Y-TPCT-ND
DigiKey MOSFET N-CH 60V 85A D2PAK Min Qty: 1 Lead time: 99 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 26437
In Stock
  • 1 $2.6300
  • 10 $1.6990
  • 100 $1.1655
  • 800 $0.8861
  • 1,600 $0.8208
  • 2,400 $0.7876
  • 4,000 $0.7669
$0.7669 / $2.6300 Buy Now
Future Electronics N-CHANNEL MOSFET RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks Container: Reel 0
Reel
  • 800 $0.8100
  • 1,600 $0.7950
  • 2,400 $0.7850
  • 3,200 $0.7750
  • 4,000 $0.7500
$0.7500 / $0.8100 Buy Now

Part Details for MCB85N06Y-TP

MCB85N06Y-TP CAD Models

MCB85N06Y-TP Part Data Attributes

MCB85N06Y-TP Micro Commercial Components
Buy Now Datasheet
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MCB85N06Y-TP Micro Commercial Components Power Field-Effect Transistor,
Part Life Cycle Code Active
Ihs Manufacturer MICRO COMMERCIAL COMPONENTS CORP
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer MCC
Avalanche Energy Rating (Eas) 290 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 85 A
Drain-source On Resistance-Max 0.013 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 80 pF
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 85 W
Pulsed Drain Current-Max (IDM) 150 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MCB85N06Y-TP

This table gives cross-reference parts and alternative options found for MCB85N06Y-TP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MCB85N06Y-TP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPB77N06S2-12 Power Field-Effect Transistor, 80A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG MCB85N06Y-TP vs SPB77N06S2-12
Part Number Description Manufacturer Compare
SPB77N06S212DTMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG MCB85N06Y-TP vs SPB77N06S212DTMA1
IPB120N06NGATMA1 Power Field-Effect Transistor, 75A I(D), 60V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG MCB85N06Y-TP vs IPB120N06NGATMA1
SPP77N06S2-12 Power Field-Effect Transistor, 80A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG MCB85N06Y-TP vs SPP77N06S2-12
SPB77N06S2-12 Power Field-Effect Transistor, 80A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG MCB85N06Y-TP vs SPB77N06S2-12
IPB80N06S2L09XT Power Field-Effect Transistor, 80A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG MCB85N06Y-TP vs IPB80N06S2L09XT
IXFH76N06-12 Power Field-Effect Transistor, 76A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN IXYS Corporation MCB85N06Y-TP vs IXFH76N06-12
STP80N06-10 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics MCB85N06Y-TP vs STP80N06-10

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