Part Details for MBR2150VG-E1 by Diodes-BCD
Overview of MBR2150VG-E1 by Diodes-BCD
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Available Datasheets
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Part Details for MBR2150VG-E1
MBR2150VG-E1 CAD Models
MBR2150VG-E1 Part Data Attributes
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MBR2150VG-E1
Diodes-BCD
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Datasheet
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MBR2150VG-E1
Diodes-BCD
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-15,
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | BCD SEMICONDUCTOR MANUFACTURING LTD | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Application | HIGH VOLTAGE POWER | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 0.85 V | |
| JEDEC-95 Code | DO-15 | |
| JESD-30 Code | O-PALF-W2 | |
| JESD-609 Code | e3 | |
| Non-rep Pk Forward Current-Max | 75 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Output Current-Max | 2 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Rep Pk Reverse Voltage-Max | 150 V | |
| Reverse Current-Max | 100 µA | |
| Surface Mount | NO | |
| Technology | SCHOTTKY | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | WIRE | |
| Terminal Position | AXIAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |