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3.6V, 1W RF Power Transistors for 900MHz Applications, 8-SOIC_N-150_MIL, 8 Pins, -40 to 85C
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73Y3000
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Newark | Rf Power Transistor, 1Ghz, 3.6V, Nsoic-8, Frequency Min:0Hz, Frequency Max:1Ghz, Gain:11.6Db, Noise Figure Typ:3.3Db, Rf Ic Case Style:Nsoic, No. Of Pins:8Pins, Supply Voltage Min:-, Supply Voltage Max:3.6V, Product Range:- Rohs Compliant: Yes |Analog Devices MAX2602ESA+ Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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Buy Now | |
DISTI #
700-MAX2602ESA
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Mouser Electronics | RF Bipolar Transistors 3.6V, 1W RF Power Transistors for 900MHz RoHS: Compliant | 430 |
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$3.8900 / $6.8700 | Buy Now |
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Analog Devices Inc | 3.6V, 1W RF Power Transistors Min Qty: 1 Package Multiple: 1 | 55 |
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$3.8996 / $6.9300 | Buy Now |
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MAX2602ESA+
Analog Devices Inc
Buy Now
Datasheet
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MAX2602ESA+
Analog Devices Inc
3.6V, 1W RF Power Transistors for 900MHz Applications, 8-SOIC_N-150_MIL, 8 Pins, -40 to 85C
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ANALOG DEVICES INC | |
Part Package Code | 8-SOIC_N-150_MIL | |
Package Description | PSOP-8 | |
Pin Count | 8 | |
Manufacturer Package Code | 8-SOIC_N-150_MIL | |
Reach Compliance Code | compliant | |
Date Of Intro | 1997-08-07 | |
Samacsys Manufacturer | Analog Devices | |
Collector Current-Max (IC) | 1.2 A | |
Collector-Emitter Voltage-Max | 15 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DC Current Gain-Min (hFE) | 100 | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |