Part Details for M5M418165CJ-5S by Mitsubishi Electric
Overview of M5M418165CJ-5S by Mitsubishi Electric
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for M5M418165CJ-5S
M5M418165CJ-5S CAD Models
M5M418165CJ-5S Part Data Attributes
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M5M418165CJ-5S
Mitsubishi Electric
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Datasheet
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M5M418165CJ-5S
Mitsubishi Electric
EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Part Package Code | SOJ | |
| Package Description | SOJ, SOJ42,.44 | |
| Pin Count | 42 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FAST PAGE WITH EDO | |
| Access Time-Max | 50 ns | |
| Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | |
| Alternate Memory Width | 8 | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PDSO-J42 | |
| JESD-609 Code | e0 | |
| Length | 27.3 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | EDO DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 42 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | SOJ | |
| Package Equivalence Code | SOJ42,.44 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 1024 | |
| Seated Height-Max | 3.55 mm | |
| Self Refresh | YES | |
| Standby Current-Max | 0.0003 A | |
| Supply Current-Max | 0.18 mA | |
| Supply Voltage-Max (Vsup) | 5.5 V | |
| Supply Voltage-Min (Vsup) | 4.5 V | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | J BEND | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for M5M418165CJ-5S
This table gives cross-reference parts and alternative options found for M5M418165CJ-5S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M5M418165CJ-5S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NN51V18165AJ-60 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42 | United Microelectronics Corporation | M5M418165CJ-5S vs NN51V18165AJ-60 |
| HYB5118165BSJ-70 | EDO DRAM, 1MX16, 70ns, CMOS, PDSO42 | Siemens | M5M418165CJ-5S vs HYB5118165BSJ-70 |
| MN4118160BSJ | Fast Page DRAM, 1MX16, 70ns, MOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 | Panasonic Electronic Components | M5M418165CJ-5S vs MN4118160BSJ |
| TMS428160-80DZ | 1MX16 FAST PAGE DRAM, 80ns, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 | Texas Instruments | M5M418165CJ-5S vs TMS428160-80DZ |
| TMS426169P-70DZ | 1MX16 EDO DRAM, 70ns, PDSO42 | Texas Instruments | M5M418165CJ-5S vs TMS426169P-70DZ |
| TMS418160-60RE | IC 1M X 16 FAST PAGE DRAM, 60 ns, PDSO42, 0.400 INCH, PLASTIC, SOJ-42, Dynamic RAM | Texas Instruments | M5M418165CJ-5S vs TMS418160-60RE |
| M5M416165CJ-7 | EDO DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 | Mitsubishi Electric | M5M418165CJ-5S vs M5M416165CJ-7 |
| M5M416160BJ-7T | Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 | Mitsubishi Electric | M5M418165CJ-5S vs M5M416160BJ-7T |
| GM71C16160AJ-6 | Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42 | SK Hynix Inc | M5M418165CJ-5S vs GM71C16160AJ-6 |
| MT4LC1M16H5DJ-60 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 | Micron Technology Inc | M5M418165CJ-5S vs MT4LC1M16H5DJ-60 |