Part Details for M470T2953BY0-LCC by Samsung Semiconductor
Overview of M470T2953BY0-LCC by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| IN80C188-12 | Rochester Electronics LLC | Microprocessor, 16-Bit, 12.5MHz, CMOS, PQCC68, PLASTIC, LCC-68 | |
| N80C188-25 | Rochester Electronics LLC | Microprocessor, 16-Bit, 25MHz, CMOS, PQCC68, PLASTIC, LCC-68 | |
| IN80C186-20 | Rochester Electronics LLC | Microprocessor, 16-Bit, 20MHz, CMOS, PQCC68, PLASTIC, LCC-68 |
Part Details for M470T2953BY0-LCC
M470T2953BY0-LCC CAD Models
M470T2953BY0-LCC Part Data Attributes
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M470T2953BY0-LCC
Samsung Semiconductor
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Datasheet
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M470T2953BY0-LCC
Samsung Semiconductor
DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | SODIMM | |
| Package Description | DIMM, DIMM200,24 | |
| Pin Count | 200 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 0.6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XZMA-N200 | |
| Memory Density | 8589934592 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Moisture Sensitivity Level | 2 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 200 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 95 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM200,24 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.128 A | |
| Supply Current-Max | 1.96 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 0.6 mm | |
| Terminal Position | ZIG-ZAG |
Alternate Parts for M470T2953BY0-LCC
This table gives cross-reference parts and alternative options found for M470T2953BY0-LCC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M470T2953BY0-LCC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M470T2953EZ3-LCC | DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | M470T2953BY0-LCC vs M470T2953EZ3-LCC |
| M470T2953EZ3-CCC | DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | M470T2953BY0-LCC vs M470T2953EZ3-CCC |
| M470T2953BY3-CCC | DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | M470T2953BY0-LCC vs M470T2953BY3-CCC |
| M470T2953BS3-CCC | DDR DRAM Module, 128MX64, 0.6ns, CMOS, SODIMM-200 | Samsung Semiconductor | M470T2953BY0-LCC vs M470T2953BS3-CCC |