Part Details for M470L1624FU0-LB0 by Samsung Semiconductor
Overview of M470L1624FU0-LB0 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for M470L1624FU0-LB0
M470L1624FU0-LB0 CAD Models
M470L1624FU0-LB0 Part Data Attributes
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M470L1624FU0-LB0
Samsung Semiconductor
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Datasheet
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M470L1624FU0-LB0
Samsung Semiconductor
DDR DRAM Module, 16MX64, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-200
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | DIMM | |
Package Description | DIMM, DIMM200,24 | |
Pin Count | 200 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.32 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.75 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 133 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-XDMA-N200 | |
Memory Density | 1073741824 bit | |
Memory IC Type | DDR DRAM MODULE | |
Memory Width | 64 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 200 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 16MX64 | |
Output Characteristics | 3-STATE | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Equivalence Code | DIMM200,24 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Self Refresh | YES | |
Supply Current-Max | 1.2 mA | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | NO LEAD | |
Terminal Pitch | 0.6 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for M470L1624FU0-LB0
This table gives cross-reference parts and alternative options found for M470L1624FU0-LB0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M470L1624FU0-LB0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HYMD216M646A6-K | DDR DRAM Module, 16MX64, 0.75ns, CMOS, SODIMM-200 | SK Hynix Inc | M470L1624FU0-LB0 vs HYMD216M646A6-K |
NT128D64SH4B0GN-75B | DDR DRAM Module, 16MX64, 0.75ns, CMOS, LEAD FREE, SODIMM-200 | Nanya Technology Corporation | M470L1624FU0-LB0 vs NT128D64SH4B0GN-75B |
M470L1624DT0-CA2 | DDR DRAM Module, 16MX64, 0.75ns, CMOS, SODIMM-200 | Samsung Semiconductor | M470L1624FU0-LB0 vs M470L1624DT0-CA2 |
HYMD216M646AL6-K | DDR DRAM Module, 16MX64, 0.75ns, CMOS, SODIMM-200 | SK Hynix Inc | M470L1624FU0-LB0 vs HYMD216M646AL6-K |
HYMD216M646DL6-K | DDR DRAM Module, 16MX64, 0.75ns, CMOS, SODIMM-200 | SK Hynix Inc | M470L1624FU0-LB0 vs HYMD216M646DL6-K |
HYMD216M646L6-K | DDR DRAM Module, 16MX64, 0.75ns, CMOS, 67.60 X 31.75 X 1 MM, SODIMM-200 | SK Hynix Inc | M470L1624FU0-LB0 vs HYMD216M646L6-K |
HYMD216M646A6-M | DDR DRAM Module, 16MX64, 0.75ns, CMOS, SODIMM-200 | SK Hynix Inc | M470L1624FU0-LB0 vs HYMD216M646A6-M |
HYMD216M646CL6-M | DDR DRAM Module, 16MX64, 0.75ns, CMOS, SODIMM-200 | SK Hynix Inc | M470L1624FU0-LB0 vs HYMD216M646CL6-M |
M470L1624DT0-CB0 | DDR DRAM Module, 16MX64, 0.75ns, CMOS, SODIMM-200 | Samsung Semiconductor | M470L1624FU0-LB0 vs M470L1624DT0-CB0 |
HYMD216M646DL6-M | DDR DRAM Module, 16MX64, 0.75ns, CMOS, PDMA200 | SK Hynix Inc | M470L1624FU0-LB0 vs HYMD216M646DL6-M |