Part Details for M36DR432AD10ZA6T by STMicroelectronics
Overview of M36DR432AD10ZA6T by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Price & Stock for M36DR432AD10ZA6T
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 648 |
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$24.8400 / $33.1200 | Buy Now |
Part Details for M36DR432AD10ZA6T
M36DR432AD10ZA6T CAD Models
M36DR432AD10ZA6T Part Data Attributes
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M36DR432AD10ZA6T
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
M36DR432AD10ZA6T
STMicroelectronics
SPECIALTY MEMORY CIRCUIT, PBGA66, 12 X 8 MM, 0.80 MM PITCH, STACK, LFBGA-66
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | BGA | |
Package Description | 12 X 8 MM, 0.80 MM PITCH, STACK, LFBGA-66 | |
Pin Count | 66 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.71 | |
Access Time-Max | 100 ns | |
Additional Feature | SRAM IS ORGANIZED AS 256K X 16 | |
JESD-30 Code | R-PBGA-B66 | |
JESD-609 Code | e0 | |
Length | 12 mm | |
Memory Density | 33554432 bit | |
Memory IC Type | MEMORY CIRCUIT | |
Memory Width | 16 | |
Mixed Memory Type | FLASH+SRAM | |
Number of Functions | 1 | |
Number of Terminals | 66 | |
Number of Words | 2097152 words | |
Number of Words Code | 2000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 2MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LFBGA | |
Package Equivalence Code | BGA66,8X12,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.4 mm | |
Standby Current-Max | 0.00001 A | |
Supply Current-Max | 0.026 mA | |
Supply Voltage-Max (Vsup) | 2.2 V | |
Supply Voltage-Min (Vsup) | 1.65 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 8 mm |
Alternate Parts for M36DR432AD10ZA6T
This table gives cross-reference parts and alternative options found for M36DR432AD10ZA6T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M36DR432AD10ZA6T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
M36DR232A100ZA6T | Memory Circuit, 2MX16, CMOS, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66 | Numonyx Memory Solutions | M36DR432AD10ZA6T vs M36DR232A100ZA6T |
M36DR232B120ZA6T | Memory Circuit, 2MX16, CMOS, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66 | Numonyx Memory Solutions | M36DR432AD10ZA6T vs M36DR232B120ZA6T |
M36DR232A120ZA6 | Memory Circuit, 2MX16, CMOS, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66 | Numonyx Memory Solutions | M36DR432AD10ZA6T vs M36DR232A120ZA6 |
M36DR232A100ZA6 | Memory Circuit, 2MX16, CMOS, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66 | Numonyx Memory Solutions | M36DR432AD10ZA6T vs M36DR232A100ZA6 |
MT28C3214P2FL-95TET | Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA66, 0.80 MM PITCH, FBGA-66 | Micron Technology Inc | M36DR432AD10ZA6T vs MT28C3214P2FL-95TET |
M36DR232B120ZA6 | Memory Circuit, 2MX16, CMOS, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66 | Numonyx Memory Solutions | M36DR432AD10ZA6T vs M36DR232B120ZA6 |
M36DR432AD10ZA6 | SPECIALTY MEMORY CIRCUIT, PBGA66, 12 X 8 MM, 0.80 MM PITCH, STACK, LFBGA-66 | STMicroelectronics | M36DR432AD10ZA6T vs M36DR432AD10ZA6 |
MT28C3212P2NFL-11TET | Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA66, FBGA-66 | Micron Technology Inc | M36DR432AD10ZA6T vs MT28C3212P2NFL-11TET |
M36DR432B100ZA6T | Memory Circuit, 2MX16, CMOS, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66 | Numonyx Memory Solutions | M36DR432AD10ZA6T vs M36DR432B100ZA6T |
M36DR432BD12ZA6T | SPECIALTY MEMORY CIRCUIT, PBGA66, 12 X 8 MM, 0.80 MM PITCH, STACK, LFBGA-66 | STMicroelectronics | M36DR432AD10ZA6T vs M36DR432BD12ZA6T |