Part Details for M368L2923BUN-CA2 by Samsung Semiconductor
Overview of M368L2923BUN-CA2 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for M368L2923BUN-CA2
M368L2923BUN-CA2 CAD Models
M368L2923BUN-CA2 Part Data Attributes
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M368L2923BUN-CA2
Samsung Semiconductor
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Datasheet
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M368L2923BUN-CA2
Samsung Semiconductor
DDR DRAM Module, 128MX64, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | DIMM | |
Package Description | DIMM, | |
Pin Count | 184 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.75 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-XDMA-N184 | |
Memory Density | 8589934592 bit | |
Memory IC Type | DDR DRAM MODULE | |
Memory Width | 64 | |
Moisture Sensitivity Level | 2 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 184 | |
Number of Words | 134217728 words | |
Number of Words Code | 128000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 128MX64 | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL |
Alternate Parts for M368L2923BUN-CA2
This table gives cross-reference parts and alternative options found for M368L2923BUN-CA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M368L2923BUN-CA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HYMD512646AL8-H | DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 | SK Hynix Inc | M368L2923BUN-CA2 vs HYMD512646AL8-H |
M368L2923CUN-CA2 | DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M368L2923BUN-CA2 vs M368L2923CUN-CA2 |
M368L2923BTM-CC4 | DDR DRAM Module, 128MX64, 0.65ns, CMOS, DIMM-184 | Samsung Semiconductor | M368L2923BUN-CA2 vs M368L2923BTM-CC4 |
MT16VDDT12864AG-262XX | DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 | Micron Technology Inc | M368L2923BUN-CA2 vs MT16VDDT12864AG-262XX |
EBD11UD8ADFB-7B-E | DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 | Elpida Memory Inc | M368L2923BUN-CA2 vs EBD11UD8ADFB-7B-E |
VR4CU286428ETP | DDR DRAM Module, 128MX64, 0.65ns, CMOS, ROHS COMPLIANT, DIMM-184 | Viking Technology | M368L2923BUN-CA2 vs VR4CU286428ETP |
HYMD512646BP8J-D43 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 | SK Hynix Inc | M368L2923BUN-CA2 vs HYMD512646BP8J-D43 |
W3EG64129S202D3 | DDR DRAM Module, 128MX64, CMOS, DIMM-184 | Microsemi Corporation | M368L2923BUN-CA2 vs W3EG64129S202D3 |
W3EG64128S335D3M | DDR DRAM Module, 128MX64, 0.7ns, CMOS, DIMM-184 | Microsemi Corporation | M368L2923BUN-CA2 vs W3EG64128S335D3M |
W3EG64128S262D3MG | DDR DRAM Module, 128MX64, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 | Microsemi Corporation | M368L2923BUN-CA2 vs W3EG64128S262D3MG |