Part Details for M312L5628BT0-CB0 by Samsung Semiconductor
Overview of M312L5628BT0-CB0 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for M312L5628BT0-CB0
M312L5628BT0-CB0 CAD Models
M312L5628BT0-CB0 Part Data Attributes
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M312L5628BT0-CB0
Samsung Semiconductor
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Datasheet
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M312L5628BT0-CB0
Samsung Semiconductor
DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | DIMM | |
Package Description | DIMM, DIMM184 | |
Pin Count | 184 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.75 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 133 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-XDMA-N184 | |
Memory Density | 19327352832 bit | |
Memory IC Type | DDR DRAM MODULE | |
Memory Width | 72 | |
Moisture Sensitivity Level | 1 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 184 | |
Number of Words | 268435456 words | |
Number of Words Code | 256000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 256MX72 | |
Output Characteristics | 3-STATE | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Equivalence Code | DIMM184 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Self Refresh | YES | |
Supply Current-Max | 7.84 mA | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | NO LEAD | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL |
Alternate Parts for M312L5628BT0-CB0
This table gives cross-reference parts and alternative options found for M312L5628BT0-CB0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M312L5628BT0-CB0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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M383L5628BT1-CB0 | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L5628BT0-CB0 vs M383L5628BT1-CB0 |
M383L5628BT1-CA2 | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L5628BT0-CB0 vs M383L5628BT1-CA2 |
MH56D72KLN-75 | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Mitsubishi Electric | M312L5628BT0-CB0 vs MH56D72KLN-75 |
M312L5628BT0-CAA | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L5628BT0-CB0 vs M312L5628BT0-CAA |
M383L5628MT1-LA2 | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L5628BT0-CB0 vs M383L5628MT1-LA2 |
M312L5623MTS-CA2 | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L5628BT0-CB0 vs M312L5623MTS-CA2 |
M312L5628MT0-CA2 | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L5628BT0-CB0 vs M312L5628MT0-CA2 |
M312L5623MTS-CB0 | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L5628BT0-CB0 vs M312L5623MTS-CB0 |
M312L5628CU0-CA2 | DDR DRAM Module, 256MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 | Samsung Semiconductor | M312L5628BT0-CB0 vs M312L5628CU0-CA2 |
MH56D72KLN-75A | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Mitsubishi Electric | M312L5628BT0-CB0 vs MH56D72KLN-75A |