Memory
M312L5628BT0-CB0
Samsung Semiconductor
Description: DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184

Overview of M312L5628BT0-CB0 by Samsung Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Computing and Data Storage

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Part Data Attributes for M312L5628BT0-CB0 by Samsung Semiconductor

M312L5628BT0-CB0
Samsung Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
DIMM
Package Description
DIMM, DIMM184
Pin Count
184
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.36
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.75 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
133 MHz
I/O Type
COMMON
JESD-30 Code
R-XDMA-N184
Memory Density
19327352832 bit
Memory IC Type
DDR DRAM MODULE
Memory Width
72
Moisture Sensitivity Level
1
Number of Functions
1
Number of Ports
1
Number of Terminals
184
Number of Words
268435456 words
Number of Words Code
256000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
256MX72
Output Characteristics
3-STATE
Package Body Material
UNSPECIFIED
Package Code
DIMM
Package Equivalence Code
DIMM184
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Refresh Cycles
8192
Self Refresh
YES
Supply Current-Max
7.84 mA
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
NO LEAD
Terminal Pitch
1.27 mm
Terminal Position
DUAL
Want to compare parts?
  1. M312L5628BT0-CB0
    Samsung Semiconductor
    DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184
    VS

Alternate Parts for M312L5628BT0-CB0

This table gives cross-reference parts and alternative options found for M312L5628BT0-CB0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M312L5628BT0-CB0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
M312L5620MTS-CB0 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5620MTS-CB0
M383L5628BT1-CAA DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M383L5628BT1-CAA
M312L5623MTS-CA2 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5623MTS-CA2
M383L5628BT1-CB0 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M383L5628BT1-CB0
M383L5628BT1-CA2 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M383L5628BT1-CA2
M312L5628CU0-CB0 DDR DRAM Module, 256MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5628CU0-CB0
M312L5628MT0-LA2 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5628MT0-LA2
M312L5620MTS-CA2 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5620MTS-CA2
M312L5628CU0-CA2 DDR DRAM Module, 256MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5628CU0-CA2
M312L5623MTS-CB0 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5623MTS-CB0
Part Number Description Manufacturer Compare
W3EG2128M72AFSR265D3SG DDR DRAM Module, 256MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 Microsemi Corporation M312L5628BT0-CB0 vs W3EG2128M72AFSR265D3SG
W3EG72255S265D3MG DDR DRAM Module, 256MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 Microsemi Corporation M312L5628BT0-CB0 vs W3EG72255S265D3MG
M312L5628MT0-LA2 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5628MT0-LA2
MT18VDDT25672AY-26A DDR DRAM Module, 256MX72, 0.75ns, CMOS, PDMA184 Micron Technology Inc M312L5628BT0-CB0 vs MT18VDDT25672AY-26A
MT36VDDT25672G-202XX DDR DRAM Module, 256MX72, 0.8ns, CMOS, MO-206, DIMM-184 Micron Technology Inc M312L5628BT0-CB0 vs MT36VDDT25672G-202XX
M312L5623MTS-CB0 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5623MTS-CB0
M312L5628CU0-CA2 DDR DRAM Module, 256MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5628CU0-CA2
M312L5628BT0-CAA DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5628BT0-CAA
MT18VDDT25672LAIG-26AXX DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Micron Technology Inc M312L5628BT0-CB0 vs MT18VDDT25672LAIG-26AXX
W3EG2128M72AFSR263AD3S DDR DRAM Module, 256MX72, CMOS, DIMM-184 Microsemi Corporation M312L5628BT0-CB0 vs W3EG2128M72AFSR263AD3S

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