Datasheets
M312L5628BT0-CB0 by: Samsung Semiconductor

DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184

Part Details for M312L5628BT0-CB0 by Samsung Semiconductor

Overview of M312L5628BT0-CB0 by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage

Part Details for M312L5628BT0-CB0

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M312L5628BT0-CB0 Part Data Attributes

M312L5628BT0-CB0 Samsung Semiconductor
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M312L5628BT0-CB0 Samsung Semiconductor DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM
Package Description DIMM, DIMM184
Pin Count 184
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.75 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N184
Memory Density 19327352832 bit
Memory IC Type DDR DRAM MODULE
Memory Width 72
Moisture Sensitivity Level 1
Number of Functions 1
Number of Ports 1
Number of Terminals 184
Number of Words 268435456 words
Number of Words Code 256000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 256MX72
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM184
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 8192
Self Refresh YES
Supply Current-Max 7.84 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 1.27 mm
Terminal Position DUAL

Alternate Parts for M312L5628BT0-CB0

This table gives cross-reference parts and alternative options found for M312L5628BT0-CB0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M312L5628BT0-CB0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
M383L5628BT1-CB0 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M383L5628BT1-CB0
M383L5628BT1-CA2 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M383L5628BT1-CA2
MH56D72KLN-75 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Mitsubishi Electric M312L5628BT0-CB0 vs MH56D72KLN-75
M312L5628BT0-CAA DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5628BT0-CAA
M383L5628MT1-LA2 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M383L5628MT1-LA2
M312L5623MTS-CA2 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5623MTS-CA2
M312L5628MT0-CA2 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5628MT0-CA2
M312L5623MTS-CB0 DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5623MTS-CB0
M312L5628CU0-CA2 DDR DRAM Module, 256MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 Samsung Semiconductor M312L5628BT0-CB0 vs M312L5628CU0-CA2
MH56D72KLN-75A DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Mitsubishi Electric M312L5628BT0-CB0 vs MH56D72KLN-75A
Part Number Description Manufacturer Compare
MT36VDDT25672DY-26AXX DDR DRAM Module, 256MX72, 0.75ns, CMOS, MO-206, DIMM-184 Micron Technology Inc M312L5628BT0-CB0 vs MT36VDDT25672DY-26AXX
HYS72D256320HBR-7-B DDR DRAM Module, 256MX72, 0.75ns, CMOS, GREEN, RDIMM-184 Qimonda AG M312L5628BT0-CB0 vs HYS72D256320HBR-7-B
MT36VDDT25672Y-26AXX DDR DRAM Module, 256MX72, 0.75ns, CMOS, LEAD FREE, DIMM-184 Micron Technology Inc M312L5628BT0-CB0 vs MT36VDDT25672Y-26AXX
HYS72D256520HR-8-A DDR DRAM Module, 256MX72, 0.8ns, CMOS, DIMM-184 Infineon Technologies AG M312L5628BT0-CB0 vs HYS72D256520HR-8-A
HYS72D256320HBR-5-C DDR DRAM Module, 256MX72, 0.5ns, CMOS, GREEN, RDIMM-184 Qimonda AG M312L5628BT0-CB0 vs HYS72D256320HBR-5-C
MT36VDDT25672G-335XX DDR DRAM Module, 256MX72, 0.7ns, CMOS, DIMM-184 Micron Technology Inc M312L5628BT0-CB0 vs MT36VDDT25672G-335XX
W3EG2128M72AFSR335D3MG DDR DRAM Module, 256MX72, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 Microsemi Corporation M312L5628BT0-CB0 vs W3EG2128M72AFSR335D3MG
MT36VDDT25672DY-202XX DDR DRAM Module, 256MX72, 0.75ns, CMOS, MO-206, DIMM-184 Micron Technology Inc M312L5628BT0-CB0 vs MT36VDDT25672DY-202XX
W3EG72256S262AJD3S DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 Microsemi Corporation M312L5628BT0-CB0 vs W3EG72256S262AJD3S
W3EG72255S202AJD3SG DDR DRAM Module, 256MX72, 0.8ns, CMOS, ROHS COMPLIANT, DIMM-184 Microsemi Corporation M312L5628BT0-CB0 vs W3EG72255S202AJD3SG

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