Part Details for M312L3223HUS-CB0 by Samsung Semiconductor
Overview of M312L3223HUS-CB0 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Renewable Energy
Part Details for M312L3223HUS-CB0
M312L3223HUS-CB0 CAD Models
M312L3223HUS-CB0 Part Data Attributes
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M312L3223HUS-CB0
Samsung Semiconductor
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Datasheet
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M312L3223HUS-CB0
Samsung Semiconductor
DDR DRAM Module, 32MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | DIMM | |
| Package Description | DIMM, DIMM184 | |
| Pin Count | 184 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | SINGLE BANK PAGE BURST | |
| Access Time-Max | 0.75 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N184 | |
| Memory Density | 2415919104 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 72 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 184 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX72 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM184 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.33 A | |
| Supply Current-Max | 2.75 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for M312L3223HUS-CB0
This table gives cross-reference parts and alternative options found for M312L3223HUS-CB0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M312L3223HUS-CB0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYMD232G726D8M-H | DDR DRAM Module, 32MX8, 0.75ns, CMOS, DIMM-184 | SK Hynix Inc | M312L3223HUS-CB0 vs HYMD232G726D8M-H |
| M312L3223BT0-LB0 | DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L3223HUS-CB0 vs M312L3223BT0-LB0 |
| M312L3223BT0-LA2 | DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L3223HUS-CB0 vs M312L3223BT0-LA2 |
| M383L3223BT1-CB0 | DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L3223HUS-CB0 vs M383L3223BT1-CB0 |
| M383L3223DTS-LA2 | DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L3223HUS-CB0 vs M383L3223DTS-LA2 |
| M312L3223ETS-CAA | DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L3223HUS-CB0 vs M312L3223ETS-CAA |
| M312L3223ETS-CB0 | DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L3223HUS-CB0 vs M312L3223ETS-CB0 |
| NT256D72S89B0GU-75B | DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 | Nanya Technology Corporation | M312L3223HUS-CB0 vs NT256D72S89B0GU-75B |
| M312L3223DG0-CB0 | DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L3223HUS-CB0 vs M312L3223DG0-CB0 |
| HYMD232G726DP8M-H | DDR DRAM Module, 32MX8, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 | SK Hynix Inc | M312L3223HUS-CB0 vs HYMD232G726DP8M-H |