There are no models available for this part yet.
Overview of M312L2923BG0-CB3 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Computing and Data Storage
CAD Models for M312L2923BG0-CB3 by Samsung Semiconductor
Part Data Attributes for M312L2923BG0-CB3 by Samsung Semiconductor
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
|
Part Package Code
|
DIMM
|
|
Package Description
|
DIMM, DIMM184
|
|
Pin Count
|
184
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.36
|
|
Access Mode
|
FOUR BANK PAGE BURST
|
|
Access Time-Max
|
0.7 ns
|
|
Additional Feature
|
AUTO/SELF REFRESH
|
|
Clock Frequency-Max (fCLK)
|
166 MHz
|
|
I/O Type
|
COMMON
|
|
JESD-30 Code
|
R-XDMA-N184
|
|
Memory Density
|
9663676416 bit
|
|
Memory IC Type
|
DDR DRAM MODULE
|
|
Memory Width
|
72
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Functions
|
1
|
|
Number of Ports
|
1
|
|
Number of Terminals
|
184
|
|
Number of Words
|
134217728 words
|
|
Number of Words Code
|
128000000
|
|
Operating Mode
|
SYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
128MX72
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
UNSPECIFIED
|
|
Package Code
|
DIMM
|
|
Package Equivalence Code
|
DIMM184
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
MICROELECTRONIC ASSEMBLY
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
8192
|
|
Self Refresh
|
YES
|
|
Supply Current-Max
|
4.93 mA
|
|
Supply Voltage-Max (Vsup)
|
2.7 V
|
|
Supply Voltage-Min (Vsup)
|
2.3 V
|
|
Supply Voltage-Nom (Vsup)
|
2.5 V
|
|
Surface Mount
|
NO
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
COMMERCIAL
|
|
Terminal Form
|
NO LEAD
|
|
Terminal Pitch
|
1.27 mm
|
|
Terminal Position
|
DUAL
|
Alternate Parts for M312L2923BG0-CB3
This table gives cross-reference parts and alternative options found for M312L2923BG0-CB3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M312L2923BG0-CB3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M312L2828CT0-LB3 | DDR DRAM Module, 128MX72, 0.7ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L2923BG0-CB3 vs M312L2828CT0-LB3 |
| EBD11RD8ADFA-6B | DDR DRAM Module, 128MX72, 0.7ns, CMOS, DIMM-184 | Elpida Memory Inc | M312L2923BG0-CB3 vs EBD11RD8ADFA-6B |
| M312L2923CUS-CB3 | DDR DRAM Module, 128MX72, 0.7ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L2923BG0-CB3 vs M312L2923CUS-CB3 |
| M312L2820EG0-CB3 | DDR DRAM Module, 128MX72, 0.7ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L2923BG0-CB3 vs M312L2820EG0-CB3 |
| M312L2828CT0-CB3 | DDR DRAM Module, 128MX72, 0.7ns, CMOS, DIMM-184 | Samsung Semiconductor | M312L2923BG0-CB3 vs M312L2828CT0-CB3 |
| M312L2820EZ0-CB3 | DDR DRAM Module, 128MX72, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 | Samsung Semiconductor | M312L2923BG0-CB3 vs M312L2820EZ0-CB3 |
| HYS72D128320GBR-6-C | DDR DRAM Module, 128MX72, 0.7ns, CMOS, DIMM-184 | Qimonda AG | M312L2923BG0-CB3 vs HYS72D128320GBR-6-C |
| HYMD212G726DFP4-J | DDR DRAM Module, 64MX4, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 | SK Hynix Inc | M312L2923BG0-CB3 vs HYMD212G726DFP4-J |
| HYS72D128320HBR-6-C | DDR DRAM Module, 128MX72, 0.7ns, CMOS, GREEN, DIMM-184 | Qimonda AG | M312L2923BG0-CB3 vs HYS72D128320HBR-6-C |
| HYS72D128320GBR-6-B | DDR DRAM Module, 128MX72, 0.7ns, CMOS, DIMM-184 | Infineon Technologies AG | M312L2923BG0-CB3 vs HYS72D128320GBR-6-B |