Datasheets
M2S56D20ATP-10L by: Mitsubishi Electric

DDR DRAM, 64MX4, 0.8ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66

Part Details for M2S56D20ATP-10L by Mitsubishi Electric

Overview of M2S56D20ATP-10L by Mitsubishi Electric

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Part Details for M2S56D20ATP-10L

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M2S56D20ATP-10L Part Data Attributes

M2S56D20ATP-10L Mitsubishi Electric
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M2S56D20ATP-10L Mitsubishi Electric DDR DRAM, 64MX4, 0.8ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Part Package Code TSOP2
Package Description SOP, TSSOP66,.46
Pin Count 66
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.8 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 125 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e0
Memory Density 268435456 bit
Memory IC Type DDR1 DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 64MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code SOP
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Refresh Cycles 8192
Self Refresh YES
Sequential Burst Length 2,4,8
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.635 mm
Terminal Position DUAL

Alternate Parts for M2S56D20ATP-10L

This table gives cross-reference parts and alternative options found for M2S56D20ATP-10L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M2S56D20ATP-10L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HM5425401BTT-10 DDR DRAM, 64MX4, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 Elpida Memory Inc M2S56D20ATP-10L vs HM5425401BTT-10
MT46V64M4TG-8 DDR DRAM, 64MX4, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc M2S56D20ATP-10L vs MT46V64M4TG-8
MT46V64M4TG-8L DDR DRAM, 64MX4, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc M2S56D20ATP-10L vs MT46V64M4TG-8L
NT5DS64M4AT-8B DDR DRAM, 64MX4, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 Nanya Technology Corporation M2S56D20ATP-10L vs NT5DS64M4AT-8B
Part Number Description Manufacturer Compare
DPDD64MX4TSAY5-DP-XX7530 DDR DRAM Module, 64MX4, CMOS, LEADED STACK, TSOP-66 B&B Electronics Manufacturing Company M2S56D20ATP-10L vs DPDD64MX4TSAY5-DP-XX7530
MT46V64M4TG-8 DDR DRAM, 64MX4, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc M2S56D20ATP-10L vs MT46V64M4TG-8
NT5DS64M4AT-75B DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 Nanya Technology Corporation M2S56D20ATP-10L vs NT5DS64M4AT-75B
K4H560438D-TLA00 DDR DRAM, 64MX4, 0.8ns, CMOS, PDSO66, 0.400 X 0.875, 0.65 MM PITCH, MS-024FC, TSOP2-66 Samsung Semiconductor M2S56D20ATP-10L vs K4H560438D-TLA00
MT46V64M4TG-6LIT:K DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66, 0.40 INCH, PLASTIC, TSOP-66 Micron Technology Inc M2S56D20ATP-10L vs MT46V64M4TG-6LIT:K
HY5DU56422AT-M DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc M2S56D20ATP-10L vs HY5DU56422AT-M
MT46V64M4P-75EHIT DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc M2S56D20ATP-10L vs MT46V64M4P-75EHIT
NT5DS64M4AT-7K DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 Nanya Technology Corporation M2S56D20ATP-10L vs NT5DS64M4AT-7K
HYB25D256400BT-7 DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Infineon Technologies AG M2S56D20ATP-10L vs HYB25D256400BT-7
IBM0625404GT3B-75E DDR DRAM, 64MX4, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 IBM M2S56D20ATP-10L vs IBM0625404GT3B-75E

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