Part Details for M12L64164A-5TG by Elite Semiconductor Memory Technology Inc
Overview of M12L64164A-5TG by Elite Semiconductor Memory Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for M12L64164A-5TG
M12L64164A-5TG CAD Models
M12L64164A-5TG Part Data Attributes
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M12L64164A-5TG
Elite Semiconductor Memory Technology Inc
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Datasheet
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M12L64164A-5TG
Elite Semiconductor Memory Technology Inc
Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | |
| Part Package Code | TSOP2 | |
| Package Description | 0.400 INCH, LEAD FREE, TSOP2-54 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 4.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.18 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for M12L64164A-5TG
This table gives cross-reference parts and alternative options found for M12L64164A-5TG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M12L64164A-5TG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HY57V641620FLP-5 | Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOPII-54 | SK Hynix Inc | M12L64164A-5TG vs HY57V641620FLP-5 |
| M12L64164A-5TIG | Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | Elite Semiconductor Memory Technology Inc | M12L64164A-5TG vs M12L64164A-5TIG |
| HY57V641620HGLT-5I | Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | M12L64164A-5TG vs HY57V641620HGLT-5I |
| K4S641632F-TL50 | Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | M12L64164A-5TG vs K4S641632F-TL50 |
| HY57V641620FSP-5 | Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOPII-54 | SK Hynix Inc | M12L64164A-5TG vs HY57V641620FSP-5 |
| W986416DH-5 | Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | Winbond Electronics Corp | M12L64164A-5TG vs W986416DH-5 |
| HYB39S64160ET-5 | Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | M12L64164A-5TG vs HYB39S64160ET-5 |
| HY57V641620FSP-5I | Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOPII-54 | SK Hynix Inc | M12L64164A-5TG vs HY57V641620FSP-5I |
| V54C365164VDLT45 | Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | M12L64164A-5TG vs V54C365164VDLT45 |
| V54C365164VDT45 | Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | M12L64164A-5TG vs V54C365164VDT45 |