Datasheets
M116S163AST12R by:

Synchronous DRAM, 1MX16, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, TSOP-50

Part Details for M116S163AST12R by Motorola Semiconductor Products

Overview of M116S163AST12R by Motorola Semiconductor Products

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Applications Smart Cities Healthcare

Part Details for M116S163AST12R

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M116S163AST12R Part Data Attributes

M116S163AST12R Motorola Semiconductor Products
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M116S163AST12R Motorola Semiconductor Products Synchronous DRAM, 1MX16, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, TSOP-50
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description TSOP2,
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode DUAL BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G50
Length 20.95 mm
Memory Density 16777216 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for M116S163AST12R

This table gives cross-reference parts and alternative options found for M116S163AST12R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M116S163AST12R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS42S16100B-6T Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Integrated Silicon Solution Inc M116S163AST12R vs IS42S16100B-6T
IS45S16100A1-7TLA1 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50 Integrated Silicon Solution Inc M116S163AST12R vs IS45S16100A1-7TLA1
UPD4516161AG5-A10BL-9NF Synchronous DRAM, 1MX16, 7ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics Group M116S163AST12R vs UPD4516161AG5-A10BL-9NF
UPD4516161AG5-A10B-9NF Synchronous DRAM, 1MX16, 7ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Elpida Memory Inc M116S163AST12R vs UPD4516161AG5-A10B-9NF
UPD4516161AG5-A10BL-9NF Synchronous DRAM, 1MX16, 7ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Elpida Memory Inc M116S163AST12R vs UPD4516161AG5-A10BL-9NF
HY57V161610ETP-55I Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 SK Hynix Inc M116S163AST12R vs HY57V161610ETP-55I
UPD42116162 1MX16 SYNCHRONOUS DRAM, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 Renesas Electronics Corporation M116S163AST12R vs UPD42116162
K4S161622H-TC800 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor M116S163AST12R vs K4S161622H-TC800
UPD4216160G5-80-7JF Fast Page DRAM, 1MX16, 80ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics Group M116S163AST12R vs UPD4216160G5-80-7JF
MB811171622A-84FN Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Limited M116S163AST12R vs MB811171622A-84FN

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