Datasheets
L8112-2CK by: GTE Microcircuits

Standard SRAM, 1KX8, 200ns, MOS, PDIP24

Part Details for L8112-2CK by GTE Microcircuits

Overview of L8112-2CK by GTE Microcircuits

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Part Details for L8112-2CK

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L8112-2CK Part Data Attributes

L8112-2CK GTE Microcircuits
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L8112-2CK GTE Microcircuits Standard SRAM, 1KX8, 200ns, MOS, PDIP24
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer GTE MICROCIRCUITS
Package Description DIP, DIP24,.6
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.41
Access Time-Max 200 ns
I/O Type COMMON
JESD-30 Code R-PDIP-T24
JESD-609 Code e0
Memory Density 8192 bit
Memory IC Type STANDARD SRAM
Memory Width 8
Number of Terminals 24
Number of Words 1024 words
Number of Words Code 1000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1KX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code DIP
Package Equivalence Code DIP24,.6
Package Shape RECTANGULAR
Package Style IN-LINE
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Surface Mount NO
Technology MOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL

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