Datasheets
KSH31I by:

3A, 40V, NPN, Si, POWER TRANSISTOR

Part Details for KSH31I by Samsung Semiconductor

Overview of KSH31I by Samsung Semiconductor

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Part Details for KSH31I

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KSH31I Part Data Attributes

KSH31I Samsung Semiconductor
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KSH31I Samsung Semiconductor 3A, 40V, NPN, Si, POWER TRANSISTOR
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description IN-LINE, R-PSIP-T3
Reach Compliance Code unknown
Collector Current-Max (IC) 3 A
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE
DC Current Gain-Min (hFE) 10
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 15 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 3 MHz

Alternate Parts for KSH31I

This table gives cross-reference parts and alternative options found for KSH31I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KSH31I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
KSH31I 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-251, IPAK-3 Fairchild Semiconductor Corporation KSH31I vs KSH31I
KSH30CI 1 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-251, IPAK-3 Fairchild Semiconductor Corporation KSH31I vs KSH30CI
KSH31CI 3A, 100V, NPN, Si, POWER TRANSISTOR Samsung Semiconductor KSH31I vs KSH31CI
Part Number Description Manufacturer Compare
KSH30-I Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 Fairchild Semiconductor Corporation KSH31I vs KSH30-I
KSH30-I Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 Samsung Semiconductor KSH31I vs KSH30-I
KSH31CI 3A, 100V, NPN, Si, POWER TRANSISTOR Samsung Semiconductor KSH31I vs KSH31CI
KSH30CI 1 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-251, IPAK-3 Fairchild Semiconductor Corporation KSH31I vs KSH30CI
KSH31-I Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 Samsung Semiconductor KSH31I vs KSH31-I
KSH31-I Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 Fairchild Semiconductor Corporation KSH31I vs KSH31-I

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