KSD882-G
Description: Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126

Overview of KSD882-G by Samsung Semiconductor

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  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

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Part Data Attributes for KSD882-G by Samsung Semiconductor

KSD882-G
Samsung Semiconductor
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.75
Case Connection
ISOLATED
Collector Current-Max (IC)
3 A
Collector-Emitter Voltage-Max
30 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
200
JEDEC-95 Code
TO-126
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
NPN
Power Dissipation Ambient-Max
10 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
90 MHz
VCEsat-Max
0.5 V
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  1. KSD882-G
    Samsung Semiconductor
    Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
    VS

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