Part Details for KSC2690A-O by Samsung Semiconductor
Overview of KSC2690A-O by Samsung Semiconductor
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Applications
Consumer Electronics
Audio and Video Systems
Part Details for KSC2690A-O
KSC2690A-O CAD Models
KSC2690A-O Part Data Attributes
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KSC2690A-O
Samsung Semiconductor
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Datasheet
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KSC2690A-O
Samsung Semiconductor
Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 1.2 A | |
Collector-Emitter Voltage-Max | 160 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 100 | |
JEDEC-95 Code | TO-126 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 20 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 155 MHz | |
VCEsat-Max | 0.7 V |