Part Details for KMM366S823BT-GL by Samsung Semiconductor
Overview of KMM366S823BT-GL by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for KMM366S823BT-GL
KMM366S823BT-GL CAD Models
KMM366S823BT-GL Part Data Attributes
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KMM366S823BT-GL
Samsung Semiconductor
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Datasheet
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KMM366S823BT-GL
Samsung Semiconductor
Synchronous DRAM Module, 8MX64, 6ns, CMOS
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-XDMA-N168 | |
| Memory Density | 536870912 bit | |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 168 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX64 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL |
Alternate Parts for KMM366S823BT-GL
This table gives cross-reference parts and alternative options found for KMM366S823BT-GL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KMM366S823BT-GL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M366S0823DTS-C1H | Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168 | Samsung Semiconductor | KMM366S823BT-GL vs M366S0823DTS-C1H |
| M364E0883BT0-C60 | EDO DRAM Module, 8MX64, 60ns, CMOS, DIMM-168 | Samsung Semiconductor | KMM366S823BT-GL vs M364E0883BT0-C60 |
| VS864648041TGA-10 | Synchronous DRAM Module, 8MX64, 7ns, CMOS, DIMM-168 | Vanguard International Semiconductor Corporation | KMM366S823BT-GL vs VS864648041TGA-10 |
| EDI4G649EV6D | EDO DRAM Module, 8MX64, 60ns, CMOS, DIMM-168 | Electronic Designs Inc | KMM366S823BT-GL vs EDI4G649EV6D |
| THMY648091EG-10 | IC 8M X 64 SYNCHRONOUS DRAM MODULE, 7 ns, DMA168, DIMM-168, Dynamic RAM | Toshiba America Electronic Components | KMM366S823BT-GL vs THMY648091EG-10 |
| MB8508S064CG-100DG | 8MX64 SYNCHRONOUS DRAM MODULE, 8.5ns, DMA168, PLASTIC, DIMM-168 | FUJITSU Semiconductor Limited | KMM366S823BT-GL vs MB8508S064CG-100DG |
| HB56S864ESN-6 | EDO DRAM Module, 8MX64, 60ns, CMOS, DIMM-168 | Hitachi Ltd | KMM366S823BT-GL vs HB56S864ESN-6 |
| MT8LSDT864AG-10CXX | Synchronous DRAM Module, 8MX64, 6ns, CMOS, | Micron Technology Inc | KMM366S823BT-GL vs MT8LSDT864AG-10CXX |
| MT4LSDT864AIY-133 | Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, PDMA168, | Micron Technology Inc | KMM366S823BT-GL vs MT4LSDT864AIY-133 |
| KMM364E883BS-6 | EDO DRAM Module, 8MX64, 60ns, CMOS | Samsung Semiconductor | KMM366S823BT-GL vs KMM364E883BS-6 |