Datasheets
KM41C1000BLP-6 by: Samsung Semiconductor

Fast Page DRAM, 1MX1, 60ns, CMOS, PDIP18, PLASTIC, DIP-18

Part Details for KM41C1000BLP-6 by Samsung Semiconductor

Overview of KM41C1000BLP-6 by Samsung Semiconductor

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Applications Computing and Data Storage

Part Details for KM41C1000BLP-6

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KM41C1000BLP-6 Part Data Attributes

KM41C1000BLP-6 Samsung Semiconductor
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KM41C1000BLP-6 Samsung Semiconductor Fast Page DRAM, 1MX1, 60ns, CMOS, PDIP18, PLASTIC, DIP-18
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code DIP
Package Description DIP, DIP18,.3
Pin Count 18
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE
Access Time-Max 60 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O Type SEPARATE
JESD-30 Code R-PDIP-T18
JESD-609 Code e0
Length 22.02 mm
Memory Density 1048576 bit
Memory IC Type FAST PAGE DRAM
Memory Width 1
Number of Functions 1
Number of Ports 1
Number of Terminals 18
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX1
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code DIP
Package Equivalence Code DIP18,.3
Package Shape RECTANGULAR
Package Style IN-LINE
Qualification Status Not Qualified
Refresh Cycles 512
Seated Height-Max 4.65 mm
Standby Current-Max 0.0002 A
Supply Current-Max 0.09 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL
Width 7.62 mm

Alternate Parts for KM41C1000BLP-6

This table gives cross-reference parts and alternative options found for KM41C1000BLP-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KM41C1000BLP-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT4C1024-6IT Fast Page DRAM, 1MX1, 60ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 Micron Technology Inc KM41C1000BLP-6 vs MT4C1024-6IT
MT4C1024-6 Fast Page DRAM, 1MX1, 60ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 Micron Technology Inc KM41C1000BLP-6 vs MT4C1024-6
MB81C1000A-60P Fast Page DRAM, 1MX1, 60ns, CMOS, PDIP18, PLASTIC, DIP-18 FUJITSU Semiconductor Limited KM41C1000BLP-6 vs MB81C1000A-60P
MN42C1000A-06 Fast Page DRAM, 1MX1, 60ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 Panasonic Electronic Components KM41C1000BLP-6 vs MN42C1000A-06
MT4C1024-6L Fast Page DRAM, 1MX1, 60ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 Micron Technology Inc KM41C1000BLP-6 vs MT4C1024-6L
Part Number Description Manufacturer Compare
M5M41001AP-10 Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 Mitsubishi Electric KM41C1000BLP-6 vs M5M41001AP-10
V53C100HP50L Fast Page DRAM, 1MX1, 50ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 Mosel Vitelic Corporation KM41C1000BLP-6 vs V53C100HP50L
HM511002P-10S Static Column DRAM, 1MX1, 100ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 Hitachi Ltd KM41C1000BLP-6 vs HM511002P-10S
TC511002AP-80 IC 1M X 1 STATIC COLUMN DRAM, 80 ns, PDIP18, 0.300 INCH, PLASTIC, DIP-18, Dynamic RAM Toshiba America Electronic Components KM41C1000BLP-6 vs TC511002AP-80
HM511002AP-12 Static Column DRAM, 1MX1, 120ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 Hitachi Ltd KM41C1000BLP-6 vs HM511002AP-12
UPD421001C-10 Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDIP18, PLASTIC, DIP-18 NEC Electronics America Inc KM41C1000BLP-6 vs UPD421001C-10
MCM511001P12 1MX1 NIBBLE MODE DRAM, 120ns, PDIP18, 0.300 INCH, PLASTIC, DIP-18 Motorola Mobility LLC KM41C1000BLP-6 vs MCM511001P12
P21010-07 Fast Page DRAM, 1MX1, 70ns, CMOS, PDIP18, PLASTIC, DIP-18 Intel Corporation KM41C1000BLP-6 vs P21010-07
KM41C1001CP-8 Nibble Mode DRAM, 1MX1, 80ns, CMOS, PDIP18, PLASTIC, DIP-18 Samsung Semiconductor KM41C1000BLP-6 vs KM41C1001CP-8
HM511001AP-8 Nibble Mode DRAM, 1MX1, 80ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 Hitachi Ltd KM41C1000BLP-6 vs HM511001AP-8

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