Part Details for KM416S4030BT-F10T by Samsung Semiconductor
Overview of KM416S4030BT-F10T by Samsung Semiconductor
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Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
LT6604IUFF-10#TRPBF | Analog Devices | 2x Very L N, Diff Amp & 10MHz | |
LT6600CDF-10#TRPBF | Analog Devices | Very L N, Diff Amp & 10MHz Lpa | |
LT6600IDF-10#TRPBF | Analog Devices | Very L N, Diff Amp & 10MHz Lpa |
Part Details for KM416S4030BT-F10T
KM416S4030BT-F10T CAD Models
KM416S4030BT-F10T Part Data Attributes
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KM416S4030BT-F10T
Samsung Semiconductor
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KM416S4030BT-F10T
Samsung Semiconductor
Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | TSOP, TSOP54,.46,32 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Time-Max | 7 ns | |
Clock Frequency-Max (fCLK) | 100 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G54 | |
JESD-609 Code | e0 | |
Memory Density | 67108864 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Terminals | 54 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 4MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP | |
Package Equivalence Code | TSOP54,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.001 A | |
Supply Current-Max | 0.12 mA | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL |