Part Details for KM416S4020BT-GLK by Samsung Semiconductor
Overview of KM416S4020BT-GLK by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Consumer Electronics
Computing and Data Storage
Part Details for KM416S4020BT-GLK
KM416S4020BT-GLK CAD Models
KM416S4020BT-GLK Part Data Attributes
|
|
KM416S4020BT-GLK
Samsung Semiconductor
Buy Now
Datasheet
|
Compare Parts:
KM416S4020BT-GLK
Samsung Semiconductor
Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54
|
| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | TSOP, TSOP54,.46,32 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Time-Max | 6 ns | |
| Clock Frequency-Max (fCLK) | 100 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.15 mA | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL |
Alternate Parts for KM416S4020BT-GLK
This table gives cross-reference parts and alternative options found for KM416S4020BT-GLK. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KM416S4020BT-GLK, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4S641622B-TC1LR0 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54 | Samsung Semiconductor | KM416S4020BT-GLK vs K4S641622B-TC1LR0 |
| KM416S4020BT-GLKZ | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54 | Samsung Semiconductor | KM416S4020BT-GLK vs KM416S4020BT-GLKZ |
| KM416S4020BT-GH | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | KM416S4020BT-GLK vs KM416S4020BT-GH |
| K4S641622B-TC1H | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54 | Samsung Semiconductor | KM416S4020BT-GLK vs K4S641622B-TC1H |
| K4S641622B-TC1LMZ | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54 | Samsung Semiconductor | KM416S4020BT-GLK vs K4S641622B-TC1LMZ |
| K4S641622B-TC1HM0 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54 | Samsung Semiconductor | KM416S4020BT-GLK vs K4S641622B-TC1HM0 |
| KM416S4020BT-GHK | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54 | Samsung Semiconductor | KM416S4020BT-GLK vs KM416S4020BT-GHK |