Datasheets
KM41464AZ-12 by: Samsung Semiconductor

Page Mode DRAM, 64KX4, 120ns, MOS, PZIP20

Part Details for KM41464AZ-12 by Samsung Semiconductor

Overview of KM41464AZ-12 by Samsung Semiconductor

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Part Details for KM41464AZ-12

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KM41464AZ-12 Part Data Attributes

KM41464AZ-12 Samsung Semiconductor
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KM41464AZ-12 Samsung Semiconductor Page Mode DRAM, 64KX4, 120ns, MOS, PZIP20
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description ZIP, ZIP20,.1
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Time-Max 120 ns
I/O Type COMMON
JESD-30 Code R-PZIP-T20
JESD-609 Code e0
Memory Density 262144 bit
Memory IC Type PAGE MODE DRAM
Memory Width 4
Moisture Sensitivity Level 3
Number of Terminals 20
Number of Words 65536 words
Number of Words Code 64000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 64KX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code ZIP
Package Equivalence Code ZIP20,.1
Package Shape RECTANGULAR
Package Style IN-LINE
Qualification Status Not Qualified
Refresh Cycles 256
Supply Current-Max 0.075 mA
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology MOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Pitch 1.27 mm
Terminal Position ZIG-ZAG

Alternate Parts for KM41464AZ-12

This table gives cross-reference parts and alternative options found for KM41464AZ-12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KM41464AZ-12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT4067EC-12/883C Page Mode DRAM, 64KX4, 120ns, CMOS, CQCC18, CERAMIC, LCC-18 Micron Technology Inc KM41464AZ-12 vs MT4067EC-12/883C
MT4067C-12 Page Mode DRAM, 64KX4, 120ns, CMOS, CDIP18, 0.300 INCH, CERAMIC, DIP-18 Micron Technology Inc KM41464AZ-12 vs MT4067C-12
M5M4464AP-12 Page Mode DRAM, 64KX4, 120ns, NMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 Mitsubishi Electric KM41464AZ-12 vs M5M4464AP-12
HM50464CP-12 Page Mode DRAM, 64KX4, 120ns, NMOS, PQCC18, PLASTIC, LCC-18 Hitachi Ltd KM41464AZ-12 vs HM50464CP-12
SMJ4464-12JDL 64KX4 PAGE MODE DRAM, 120ns, CDIP18, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-18 Texas Instruments KM41464AZ-12 vs SMJ4464-12JDL
MB81464-12PD Page Mode DRAM, 64KX4, 120ns, MOS, PQCC18 FUJITSU Limited KM41464AZ-12 vs MB81464-12PD
MB81464-12PSZ Page Mode DRAM, 64KX4, 120ns, MOS, PZIP20 FUJITSU Limited KM41464AZ-12 vs MB81464-12PSZ
UPD41464L-12 Page Mode DRAM, 64KX4, 120ns, NMOS, PQCC18, PLASTIC, LCC-18 NEC Electronics America Inc KM41464AZ-12 vs UPD41464L-12
MSM41464-12RS Page Mode DRAM, 64KX4, 120ns, NMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 OKI Electric Industry Co Ltd KM41464AZ-12 vs MSM41464-12RS
5962-8767601VX Page Mode DRAM, 64KX4, 120ns, NMOS, 0.960 X 0.310 INCH, 0.200 INCH HEIGHT, DIP-18 Micron Technology Inc KM41464AZ-12 vs 5962-8767601VX

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