Datasheets
KF5N50D by: KEC

Power Field-Effect Transistor, 4.3A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2

Part Details for KF5N50D by KEC

Overview of KF5N50D by KEC

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Part Details for KF5N50D

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KF5N50D Part Data Attributes:

KF5N50D KEC
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KF5N50D KEC Power Field-Effect Transistor, 4.3A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2
Part Life Cycle Code Obsolete
Ihs Manufacturer KEC CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 270 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 4.3 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 13 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for KF5N50D

This table gives cross-reference parts and alternative options found for KF5N50D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KF5N50D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF830SU Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3 Fairchild Semiconductor Corporation KF5N50D vs IRF830SU
TSM5ND50CPRO Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT, IPAK-3 Taiwan Semiconductor KF5N50D vs TSM5ND50CPRO
UF830G-TM3-R Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE PACKAGE-3 Unisonic Technologies Co Ltd KF5N50D vs UF830G-TM3-R
UF830L-TQ2-T Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd KF5N50D vs UF830L-TQ2-T
IRF830AJ69Z Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation KF5N50D vs IRF830AJ69Z
UF830G-TQ2-R Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd KF5N50D vs UF830G-TQ2-R
STP5K50Z 4.4A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics KF5N50D vs STP5K50Z
STP5NK52ZD N-channel 520V - 1.22Ohm - 4.4A - TO-220 - DPAK - I2PAK - IPAK STMicroelectronics KF5N50D vs STP5NK52ZD
SFF430M Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Solid State Devices Inc (SSDI) KF5N50D vs SFF430M
IXTV5N50P Power Field-Effect Transistor, 4.8A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IXYS Corporation KF5N50D vs IXTV5N50P

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