Part Details for K7R643684M-EC250 by Samsung Semiconductor
Overview of K7R643684M-EC250 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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SIT9025AEB72-18EC25.000000 | SiTime | 1 to 150 MHz, AEC-Q100 Spread-spectrum Oscillator | |
SIT9025AAA11H18EC25.000000 | SiTime | 1 to 150 MHz, AEC-Q100 Spread-spectrum Oscillator | |
SiT9025AAL13H33EC25.000000 | SiTime | 1 to 150 MHz, AEC-Q100 Spread-spectrum Oscillator |
Part Details for K7R643684M-EC250
K7R643684M-EC250 CAD Models
K7R643684M-EC250 Part Data Attributes
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K7R643684M-EC250
Samsung Semiconductor
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Datasheet
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K7R643684M-EC250
Samsung Semiconductor
QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | BGA | |
Package Description | LBGA, BGA165,11X15,40 | |
Pin Count | 165 | |
Reach Compliance Code | unknown | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 0.45 ns | |
Additional Feature | PIPELINED ARCHITECTURE | |
Clock Frequency-Max (fCLK) | 250 MHz | |
I/O Type | SEPARATE | |
JESD-30 Code | R-PBGA-B165 | |
Length | 17 mm | |
Memory Density | 75497472 bit | |
Memory IC Type | QDR SRAM | |
Memory Width | 36 | |
Number of Functions | 1 | |
Number of Terminals | 165 | |
Number of Words | 2097152 words | |
Number of Words Code | 2000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 2MX36 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Equivalence Code | BGA165,11X15,40 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.4 mm | |
Standby Voltage-Min | 1.7 V | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 15 mm |
Alternate Parts for K7R643684M-EC250
This table gives cross-reference parts and alternative options found for K7R643684M-EC250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7R643684M-EC250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
GS8662D36BD-250T | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | K7R643684M-EC250 vs GS8662D36BD-250T |
GS8662D36GE-250 | DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | K7R643684M-EC250 vs GS8662D36GE-250 |
CY7C1515KV18-250BZC | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Infineon Technologies AG | K7R643684M-EC250 vs CY7C1515KV18-250BZC |
GS8672D36BE-250 | Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | K7R643684M-EC250 vs GS8672D36BE-250 |
K7R643684M-FC25T | Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165 | Samsung Semiconductor | K7R643684M-EC250 vs K7R643684M-FC25T |
CY7C1515JV18-250BZC | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | K7R643684M-EC250 vs CY7C1515JV18-250BZC |
IS61QDB42M36A-250M3 | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165 | Integrated Silicon Solution Inc | K7R643684M-EC250 vs IS61QDB42M36A-250M3 |
GS8662D36BGD-250 | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | K7R643684M-EC250 vs GS8662D36BGD-250 |
GS8672D36BE-250T | Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | K7R643684M-EC250 vs GS8672D36BE-250T |
CY7C1515V18-250BZC | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | K7R643684M-EC250 vs CY7C1515V18-250BZC |