Memory
K7N801809A-HC22
Samsung Semiconductor
Description: ZBT SRAM, 512KX18, 2.8ns, CMOS, PBGA119, BGA-119

Overview of K7N801809A-HC22 by Samsung Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Available Datasheets

Part # Manufacturer Description Datasheet
54HC221AJ/883C Rochester Electronics Replacement for National Semiconductor part number MM54HC221AJ/883C. Buy from authorized manufacturer Rochester Electronics.
0603HC-22NXGBW Coilcraft Inc General Purpose Inductor, 0.022uH, 2%, 1 Element, Ceramic-Core, SMD, 0704, CHIP
0603HC-22NXGBU Coilcraft Inc General Purpose Inductor, 0.022uH, 2%, 1 Element, Ceramic-Core, SMD, 0704, CHIP

CAD Models for K7N801809A-HC22 by Samsung Semiconductor
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Part Data Attributes for K7N801809A-HC22 by Samsung Semiconductor

K7N801809A-HC22
Samsung Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
Package Description
BGA, BGA119,7X17,50
Pin Count
119
Reach Compliance Code
unknown
ECCN Code
3A991.B.2.A
HTS Code
8542.32.00.41
Access Time-Max
2.8 ns
Clock Frequency-Max (fCLK)
225 MHz
I/O Type
COMMON
JESD-30 Code
R-PBGA-B119
JESD-609 Code
e0
Length
22 mm
Memory Density
9437184 bit
Memory IC Type
ZBT SRAM
Memory Width
18
Number of Functions
1
Number of Terminals
119
Number of Words
524288 words
Number of Words Code
512000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
512KX18
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
BGA
Package Equivalence Code
BGA119,7X17,50
Package Shape
RECTANGULAR
Package Style
GRID ARRAY
Parallel/Serial
PARALLEL
Qualification Status
Not Qualified
Standby Current-Max
0.01 A
Standby Voltage-Min
3.14 V
Supply Current-Max
0.5 mA
Supply Voltage-Max (Vsup)
3.465 V
Supply Voltage-Min (Vsup)
3.135 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
BALL
Terminal Pitch
1.27 mm
Terminal Position
BOTTOM
Width
14 mm
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  1. K7N801809A-HC22
    Samsung Semiconductor
    ZBT SRAM, 512KX18, 2.8ns, CMOS, PBGA119, BGA-119
    VS

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