Part Details for K7I161882B-FC20 by Samsung Semiconductor
Overview of K7I161882B-FC20 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| AN87C51FC-20 | Rochester Electronics | Microcontroller, 8-Bit, OTPROM, 20MHz, CMOS, PQCC44, PLASTIC, LCC-44 | |
| AN87C51FC-20F8 | Rochester Electronics LLC | 87C51FC - Microcontroller, 8-Bit | |
| AP87C51FC20F8 | Rochester Electronics LLC | 87C51FC - Microcontroller, 8-Bit |
Part Details for K7I161882B-FC20
K7I161882B-FC20 CAD Models
K7I161882B-FC20 Part Data Attributes
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K7I161882B-FC20
Samsung Semiconductor
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Datasheet
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K7I161882B-FC20
Samsung Semiconductor
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | LBGA, BGA165,11X15,40 | |
| Pin Count | 165 | |
| Reach Compliance Code | unknown | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PBGA-B165 | |
| JESD-609 Code | e0 | |
| Length | 17 mm | |
| Memory Density | 18874368 bit | |
| Memory IC Type | DDR SRAM | |
| Memory Width | 18 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX18 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Standby Current-Max | 0.16 A | |
| Standby Voltage-Min | 1.7 V | |
| Supply Current-Max | 0.4 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Width | 15 mm |
Alternate Parts for K7I161882B-FC20
This table gives cross-reference parts and alternative options found for K7I161882B-FC20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7I161882B-FC20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CY7C1318BV18-200BZXI | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | K7I161882B-FC20 vs CY7C1318BV18-200BZXI |
| GS8182T18BGD-250IT | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | K7I161882B-FC20 vs GS8182T18BGD-250IT |
| GS8182T18GBD-200T | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, ROHS COMPLIANT, FPBGA-165 | GSI Technology | K7I161882B-FC20 vs GS8182T18GBD-200T |
| CY7C1318CV18-200BZXI | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | K7I161882B-FC20 vs CY7C1318CV18-200BZXI |
| GS8182T18BD-250I | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | K7I161882B-FC20 vs GS8182T18BD-250I |
| GS8182T18BGD-200IT | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | K7I161882B-FC20 vs GS8182T18BGD-200IT |
| CY7C1318BV18-200BZC | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | K7I161882B-FC20 vs CY7C1318BV18-200BZC |
| UPD44164182AF5-E50-EQ2-A | DDR SRAM, 1MX18, CMOS, PBGA165, 13 X 5 MM, LEAD FREE, PLASTIC, BGA-165 | NEC Electronics Group | K7I161882B-FC20 vs UPD44164182AF5-E50-EQ2-A |
| GS8182T18GBD-200I | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, ROHS COMPLIANT, FPBGA-165 | GSI Technology | K7I161882B-FC20 vs GS8182T18GBD-200I |
| GS8182T18BD-250T | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | K7I161882B-FC20 vs GS8182T18BD-250T |