Part Details for K6R1016V1D-KC10 by Samsung Semiconductor
Overview of K6R1016V1D-KC10 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 8N4S270KC-1088CDI8 | Renesas Electronics Corporation | LVDS Frequency-Programmable Crystal Oscillator | |
| 8N4S271KC-1080CDI | Renesas Electronics Corporation | LVDS Frequency-Programmable Crystal Oscillator | |
| 8N3D085KC-1074CDI | Renesas Electronics Corporation | LVPECL Dual Frequency Programmable Crystal Oscillator |
Part Details for K6R1016V1D-KC10
K6R1016V1D-KC10 CAD Models
K6R1016V1D-KC10 Part Data Attributes
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K6R1016V1D-KC10
Samsung Semiconductor
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Datasheet
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K6R1016V1D-KC10
Samsung Semiconductor
Standard SRAM, 64KX16, 10ns, CMOS, PDSO44
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | SOJ, SOJ44,.44 | |
| Reach Compliance Code | unknown | |
| ECCN Code | 3A991.B.2.B | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 10 ns | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PDSO-J44 | |
| JESD-609 Code | e1 | |
| Memory Density | 1048576 bit | |
| Memory IC Type | STANDARD SRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Terminals | 44 | |
| Number of Words | 65536 words | |
| Number of Words Code | 64000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 64KX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | SOJ | |
| Package Equivalence Code | SOJ44,.44 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Standby Current-Max | 0.005 A | |
| Standby Voltage-Min | 3 V | |
| Supply Current-Max | 0.065 mA | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | J BEND | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL |
Alternate Parts for K6R1016V1D-KC10
This table gives cross-reference parts and alternative options found for K6R1016V1D-KC10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K6R1016V1D-KC10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AS7C31026B-10JIN | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, PLASTIC, SOJ-44 | Alliance Semiconductor Corporation | K6R1016V1D-KC10 vs AS7C31026B-10JIN |
| K6R1016V1C-JI100 | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44 | Samsung Semiconductor | K6R1016V1D-KC10 vs K6R1016V1C-JI100 |
| IDT71V016SA10Y8 | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44 | Integrated Device Technology Inc | K6R1016V1D-KC10 vs IDT71V016SA10Y8 |
| CY7C1021CV33-10VXI | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, SOJ-44 | Cypress Semiconductor | K6R1016V1D-KC10 vs CY7C1021CV33-10VXI |
| K6R1016V1D-JI10 | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44 | Samsung Semiconductor | K6R1016V1D-KC10 vs K6R1016V1D-JI10 |
| K6R1016V1B-JC10 | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, PLASTIC, SOJ-44 | Samsung Semiconductor | K6R1016V1D-KC10 vs K6R1016V1B-JC10 |
| AS7C31026B-10JC | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44 | Alliance Memory Inc | K6R1016V1D-KC10 vs AS7C31026B-10JC |
| AS7C31026B-10JC | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44 | Alliance Semiconductor Corporation | K6R1016V1D-KC10 vs AS7C31026B-10JC |
| KM616V1002BJ-10 | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44 | Samsung Semiconductor | K6R1016V1D-KC10 vs KM616V1002BJ-10 |
| 71V016SA10Y8 | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44 | Integrated Device Technology Inc | K6R1016V1D-KC10 vs 71V016SA10Y8 |