Datasheets
K4T51163QQ-BIE70 by: Samsung Semiconductor

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84

Part Details for K4T51163QQ-BIE70 by Samsung Semiconductor

Overview of K4T51163QQ-BIE70 by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage

Part Details for K4T51163QQ-BIE70

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K4T51163QQ-BIE70 Part Data Attributes

K4T51163QQ-BIE70 Samsung Semiconductor
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K4T51163QQ-BIE70 Samsung Semiconductor DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description VFBGA,
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B84
Length 12.5 mm
Memory Density 536870912 bit
Memory IC Type DDR DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Organization 32MX16
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Seated Height-Max 1 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 7.5 mm

Alternate Parts for K4T51163QQ-BIE70

This table gives cross-reference parts and alternative options found for K4T51163QQ-BIE70. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4T51163QQ-BIE70, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4T51163QQ-BPF70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor K4T51163QQ-BIE70 vs K4T51163QQ-BPF70
K4T51163QQ-BCF70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 Samsung Semiconductor K4T51163QQ-BIE70 vs K4T51163QQ-BCF70
K4T51163QQ-BCE70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 Samsung Semiconductor K4T51163QQ-BIE70 vs K4T51163QQ-BCE70
Part Number Description Manufacturer Compare
MT47H32M16HR-25EIT:H DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc K4T51163QQ-BIE70 vs MT47H32M16HR-25EIT:H
IS46DR16320E-25DBLA2-TR DDR DRAM, Integrated Silicon Solution Inc K4T51163QQ-BIE70 vs IS46DR16320E-25DBLA2-TR
IS43DR16320E-25DBL DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84 Integrated Silicon Solution Inc K4T51163QQ-BIE70 vs IS43DR16320E-25DBL
EM68B16CWPA-25H DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 10 X 12.50 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 Etron Technology Inc K4T51163QQ-BIE70 vs EM68B16CWPA-25H
M14D5121632A-2.5BBIG2A DDR DRAM, Elite Semiconductor Memory Technology Inc K4T51163QQ-BIE70 vs M14D5121632A-2.5BBIG2A
SCX18T512160AF-25D DDR DRAM, Xi'an UniIC Semiconductors Co Ltd K4T51163QQ-BIE70 vs SCX18T512160AF-25D
IS43DR16320E-25DBLI-TR DDR DRAM, Integrated Silicon Solution Inc K4T51163QQ-BIE70 vs IS43DR16320E-25DBLI-TR
NT5TU32M16EG-ACA DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, VFBGA-84 Nanya Technology Corporation K4T51163QQ-BIE70 vs NT5TU32M16EG-ACA
IS43DR16320E-25DBLI DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84 Integrated Silicon Solution Inc K4T51163QQ-BIE70 vs IS43DR16320E-25DBLI
AS4C32M16D2-25BIN DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84 Alliance Memory Inc K4T51163QQ-BIE70 vs AS4C32M16D2-25BIN

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