Part Details for K4T51083QE-ZCE6T by Samsung Semiconductor
Overview of K4T51083QE-ZCE6T by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for K4T51083QE-ZCE6T
K4T51083QE-ZCE6T CAD Models
K4T51083QE-ZCE6T Part Data Attributes
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K4T51083QE-ZCE6T
Samsung Semiconductor
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Datasheet
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K4T51083QE-ZCE6T
Samsung Semiconductor
DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | FBGA, BGA60,9X11,32 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Time-Max | 0.45 ns | |
| Clock Frequency-Max (fCLK) | 333 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| JESD-609 Code | e1 | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 8 | |
| Moisture Sensitivity Level | 3 | |
| Number of Terminals | 60 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Temperature-Max | 95 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | FBGA | |
| Package Equivalence Code | BGA60,9X11,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.008 A | |
| Supply Current-Max | 0.18 mA | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM |
Alternate Parts for K4T51083QE-ZCE6T
This table gives cross-reference parts and alternative options found for K4T51083QE-ZCE6T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4T51083QE-ZCE6T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4T51083QG-HCE60 | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | K4T51083QE-ZCE6T vs K4T51083QG-HCE60 |
| K4T51083QG-HCE6T | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, | Samsung Semiconductor | K4T51083QE-ZCE6T vs K4T51083QG-HCE6T |
| K4T51083QC-ZCE6T | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60 | Samsung Semiconductor | K4T51083QE-ZCE6T vs K4T51083QC-ZCE6T |
| K4T51083QI-HCE6T | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60 | Samsung Semiconductor | K4T51083QE-ZCE6T vs K4T51083QI-HCE6T |
| K4T51083QE-ZCE60 | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | K4T51083QE-ZCE6T vs K4T51083QE-ZCE60 |
| HYB18TC512800B2F-3S | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, PLASTIC TFBGA-60 | Qimonda AG | K4T51083QE-ZCE6T vs HYB18TC512800B2F-3S |
| K4T51083QG-HCE6 | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60 | Samsung Semiconductor | K4T51083QE-ZCE6T vs K4T51083QG-HCE6 |
| K4T51083QI-HCE6 | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60 | Samsung Semiconductor | K4T51083QE-ZCE6T vs K4T51083QI-HCE6 |
| K4T51083QE-ZCE6 | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60 | Samsung Semiconductor | K4T51083QE-ZCE6T vs K4T51083QE-ZCE6 |