There are no models available for this part yet.
Overview of K4T1G164QE-HIE60 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
CAD Models for K4T1G164QE-HIE60 by Samsung Semiconductor
Part Data Attributes for K4T1G164QE-HIE60 by Samsung Semiconductor
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|
|---|---|
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Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
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SAMSUNG SEMICONDUCTOR INC
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Part Package Code
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BGA
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Package Description
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TFBGA,
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Pin Count
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84
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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HTS Code
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8542.32.00.32
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Access Mode
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MULTI BANK PAGE BURST
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Access Time-Max
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0.45 ns
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Additional Feature
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AUTO/SELF REFRESH
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JESD-30 Code
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R-PBGA-B84
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Length
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12.5 mm
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Memory Density
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1073741824 bit
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Memory IC Type
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DDR DRAM
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Memory Width
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16
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Number of Functions
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1
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Number of Ports
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1
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Number of Terminals
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84
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Number of Words
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67108864 words
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Number of Words Code
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64000000
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Operating Mode
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SYNCHRONOUS
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Operating Temperature-Max
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95 °C
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Operating Temperature-Min
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-40 °C
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Organization
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64MX16
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Package Body Material
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PLASTIC/EPOXY
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Package Code
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TFBGA
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Package Shape
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RECTANGULAR
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Package Style
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GRID ARRAY, THIN PROFILE, FINE PITCH
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Qualification Status
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Not Qualified
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Seated Height-Max
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1.2 mm
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Self Refresh
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YES
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Supply Voltage-Max (Vsup)
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1.9 V
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Supply Voltage-Min (Vsup)
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1.7 V
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Supply Voltage-Nom (Vsup)
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1.8 V
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Surface Mount
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YES
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Technology
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CMOS
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Temperature Grade
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INDUSTRIAL
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Terminal Form
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BALL
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Terminal Pitch
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0.8 mm
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Terminal Position
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BOTTOM
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Width
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7.5 mm
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Alternate Parts for K4T1G164QE-HIE60
This table gives cross-reference parts and alternative options found for K4T1G164QE-HIE60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4T1G164QE-HIE60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4T1G164QE-HIPE6 | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | Samsung Semiconductor | K4T1G164QE-HIE60 vs K4T1G164QE-HIPE6 |
| MT47H64M16HW-3IT:G | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 | Micron Technology Inc | K4T1G164QE-HIE60 vs MT47H64M16HW-3IT:G |
| MT47H64M16HR-3AT | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | K4T1G164QE-HIE60 vs MT47H64M16HR-3AT |
| NT5TU64M16GG-3C | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, BGA-84 | Nanya Technology Corporation | K4T1G164QE-HIE60 vs NT5TU64M16GG-3C |
| NT5TU64M16GG-3CI | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, BGA-84 | Nanya Technology Corporation | K4T1G164QE-HIE60 vs NT5TU64M16GG-3CI |
| MT47H64M16HR-3AAT | DDR DRAM, | Micron Technology Inc | K4T1G164QE-HIE60 vs MT47H64M16HR-3AAT |
| MT47H64M16HR-3IT:H | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | K4T1G164QE-HIE60 vs MT47H64M16HR-3IT:H |
| MT47H64M16HR-3:GTR | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | K4T1G164QE-HIE60 vs MT47H64M16HR-3:GTR |
| EDE1116AGBG-6E-F | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | Elpida Memory Inc | K4T1G164QE-HIE60 vs EDE1116AGBG-6E-F |
| MT47H64M16HR-3 | DDR DRAM, | Micron Technology Inc | K4T1G164QE-HIE60 vs MT47H64M16HR-3 |