Datasheets
K4T1G044QC-ZLCC by: Samsung Semiconductor

DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60

Part Details for K4T1G044QC-ZLCC by Samsung Semiconductor

Overview of K4T1G044QC-ZLCC by Samsung Semiconductor

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage Entertainment and Gaming

Part Details for K4T1G044QC-ZLCC

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K4T1G044QC-ZLCC Part Data Attributes

K4T1G044QC-ZLCC Samsung Semiconductor
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K4T1G044QC-ZLCC Samsung Semiconductor DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description FBGA, BGA60,9X11,32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Time-Max 0.6 ns
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B60
JESD-609 Code e1
Memory Density 1073741824 bit
Memory IC Type DDR2 DRAM
Memory Width 4
Moisture Sensitivity Level 3
Number of Terminals 60
Number of Words 268435456 words
Number of Words Code 256000000
Organization 256MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code FBGA
Package Equivalence Code BGA60,9X11,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 4,8
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM

Alternate Parts for K4T1G044QC-ZLCC

This table gives cross-reference parts and alternative options found for K4T1G044QC-ZLCC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4T1G044QC-ZLCC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT47H256M4HQ-5EIT:E DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc K4T1G044QC-ZLCC vs MT47H256M4HQ-5EIT:E
MT47H256M4HQ-5ELIT:G DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc K4T1G044QC-ZLCC vs MT47H256M4HQ-5ELIT:G
MT47H256M4HQ-5E:E DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60, 8 X 11.50 MM, LEAD FREE, FBGA-60 Micron Technology Inc K4T1G044QC-ZLCC vs MT47H256M4HQ-5E:E
MT47H256M4HV-5EL:E DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 Micron Technology Inc K4T1G044QC-ZLCC vs MT47H256M4HV-5EL:E
K4T1G044QC-ZLCCT DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60 Samsung Semiconductor K4T1G044QC-ZLCC vs K4T1G044QC-ZLCCT
K4T1G044QC-ZCCC DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60 Samsung Semiconductor K4T1G044QC-ZLCC vs K4T1G044QC-ZCCC
K4T1G044QC-ZCCCT DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60 Samsung Semiconductor K4T1G044QC-ZLCC vs K4T1G044QC-ZCCCT
MT47H256M4HV-5ELIT:G DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 Micron Technology Inc K4T1G044QC-ZLCC vs MT47H256M4HV-5ELIT:G
K4T1G044QC-ZLCC0 DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60 Samsung Semiconductor K4T1G044QC-ZLCC vs K4T1G044QC-ZLCC0
MT47H256M4HQ-5EL:G DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA60, 8 X 11.50 MM, LEAD FREE, FBGA-60 Micron Technology Inc K4T1G044QC-ZLCC vs MT47H256M4HQ-5EL:G
Part Number Description Manufacturer Compare
V59C1G01408QBJ-25A DDR DRAM, 256MX4, CMOS, PBGA60, GREEN, FBGA-60 ProMOS Technologies Inc K4T1G044QC-ZLCC vs V59C1G01408QBJ-25A
V59C1G01408QBLJ19AI DDR DRAM, 256MX4, CMOS, PBGA60, GREEN, FBGA-60 ProMOS Technologies Inc K4T1G044QC-ZLCC vs V59C1G01408QBLJ19AI
MT47H256M4JN-25ELIT:H DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 Micron Technology Inc K4T1G044QC-ZLCC vs MT47H256M4JN-25ELIT:H
MT47H256M4JN-25EIT:H DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 Micron Technology Inc K4T1G044QC-ZLCC vs MT47H256M4JN-25EIT:H
MT47H256M4HV-187ELAT:G DDR DRAM, 256MX4, 3.5ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 Micron Technology Inc K4T1G044QC-ZLCC vs MT47H256M4HV-187ELAT:G
MT47H128M4CB-3AT:B DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, 12 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc K4T1G044QC-ZLCC vs MT47H128M4CB-3AT:B
EDE1104ACSE-6C-E Synchronous DRAM, 256MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 Elpida Memory Inc K4T1G044QC-ZLCC vs EDE1104ACSE-6C-E
V59C1G01408QBLP25 DDR DRAM, 256MX4, CMOS, PBGA60, GREEN, FBGA-60 ProMOS Technologies Inc K4T1G044QC-ZLCC vs V59C1G01408QBLP25
NT5TB256M4DE-AD DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 0.80 MM PITCH, ROHS COMPLIANT, BGA-60 Nanya Technology Corporation K4T1G044QC-ZLCC vs NT5TB256M4DE-AD
HY5PS1G431CFR-S6I DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc K4T1G044QC-ZLCC vs HY5PS1G431CFR-S6I

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