Memory
K4S643234E-TE800
Samsung Semiconductor
Description: Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86

Overview of K4S643234E-TE800 by Samsung Semiconductor

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Where used in Applications: Education and Research Consumer Electronics Computing and Data Storage

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Part Data Attributes for K4S643234E-TE800 by Samsung Semiconductor

K4S643234E-TE800
Samsung Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
TSOP2
Package Description
TSOP2,
Pin Count
86
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
6 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PDSO-G86
Length
22.22 mm
Memory Density
67108864 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Number of Functions
1
Number of Ports
1
Number of Terminals
86
Number of Words
2097152 words
Number of Words Code
2000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-25 °C
Organization
2MX32
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel)
240
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
3.3 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
OTHER
Terminal Form
GULL WING
Terminal Pitch
0.5 mm
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Width
10.16 mm
Want to compare parts?
  1. K4S643234E-TE800
    Samsung Semiconductor
    Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
    VS

Alternate Parts for K4S643234E-TE800

This table gives cross-reference parts and alternative options found for K4S643234E-TE800. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S643234E-TE800, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4S643234E-TC100 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643234E-TE800 vs K4S643234E-TC100
M12S64322A-7TG Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 Elite Semiconductor Memory Technology Inc K4S643234E-TE800 vs M12S64322A-7TG
K4S643234E-TC800 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643234E-TE800 vs K4S643234E-TC800
K4S643234E-TC80 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643234E-TE800 vs K4S643234E-TC80
K4S643234E-TE80 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643234E-TE800 vs K4S643234E-TE80
K4S643234E-TE10 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643234E-TE800 vs K4S643234E-TE10
Part Number Description Manufacturer Compare
K4S643232F-TC450 Synchronous DRAM, 2MX32, 4ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643234E-TE800 vs K4S643232F-TC450
MB81P643287-50FN DDR DRAM, 2MX32, 1.1ns, CMOS, PDSO86, PLASTIC, TSOP2-86 FUJITSU Limited K4S643234E-TE800 vs MB81P643287-50FN
TC59S6432CFTL-54 IC 2M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86, 0.400 ICNH, 0.50 MM PITCH, PLASTIC, TSOP2-86, Dynamic RAM Toshiba America Electronic Components K4S643234E-TE800 vs TC59S6432CFTL-54
MB811643222A-125FN 2MX32 SYNCHRONOUS DRAM, PDSO86, 0.400 INCH, 0.50 MM PITCH, TSOP2-86 FUJITSU Limited K4S643234E-TE800 vs MB811643222A-125FN
MB81E643242-15FN 2MX32 SYNCHRONOUS DRAM, 8ns, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 FUJITSU Semiconductor Limited K4S643234E-TE800 vs MB81E643242-15FN
IS42S32200AL-8T Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 Integrated Silicon Solution Inc K4S643234E-TE800 vs IS42S32200AL-8T
HY57V563220ALT-6 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, 0.80 MM PITCH, TSOP2-86 SK Hynix Inc K4S643234E-TE800 vs HY57V563220ALT-6
W9864G2JH-6I Synchronous DRAM, 4MX32, 5ns, CMOS, PDSO86, TSOPII-86 Winbond Electronics Corp K4S643234E-TE800 vs W9864G2JH-6I
HY57V643220CLTP-5 Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc K4S643234E-TE800 vs HY57V643220CLTP-5
HY57V653220BTC-8 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc K4S643234E-TE800 vs HY57V653220BTC-8

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