Part Details for K4S643234E-SE80 by Samsung Semiconductor
Overview of K4S643234E-SE80 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Computing and Data Storage
Part Details for K4S643234E-SE80
K4S643234E-SE80 CAD Models
K4S643234E-SE80 Part Data Attributes
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K4S643234E-SE80
Samsung Semiconductor
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Datasheet
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K4S643234E-SE80
Samsung Semiconductor
Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | BGA | |
Package Description | LFBGA, BGA90,9X15,32 | |
Pin Count | 90 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 6 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 125 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PBGA-B90 | |
JESD-609 Code | e0 | |
Length | 13 mm | |
Memory Density | 67108864 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 32 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 90 | |
Number of Words | 2097152 words | |
Number of Words Code | 2000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -25 °C | |
Organization | 2MX32 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LFBGA | |
Package Equivalence Code | BGA90,9X15,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.45 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.0012 A | |
Supply Current-Max | 0.135 mA | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 11 mm |
Alternate Parts for K4S643234E-SE80
This table gives cross-reference parts and alternative options found for K4S643234E-SE80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S643234E-SE80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IS42S32200E-6B | 2MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, 13 X 8 MM, 0.80 MM PITCH, TFBGA-90 | ABLIC Inc. | K4S643234E-SE80 vs IS42S32200E-6B |
M12S64322A-7BG | Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, 13 X 8 MM, LEAD FREE, BGA-90 | Elite Semiconductor Memory Technology Inc | K4S643234E-SE80 vs M12S64322A-7BG |
K4S643233H-FG600 | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S643234E-SE80 vs K4S643233H-FG600 |
K4S643233E-SE10 | Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S643234E-SE80 vs K4S643233E-SE10 |
MT48LC2M32B2B5-7IT:G | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 | Micron Technology Inc | K4S643234E-SE80 vs MT48LC2M32B2B5-7IT:G |
MT48LC2M32LFFC-8LIT | Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, PLASTIC, FBGA-90 | Micron Technology Inc | K4S643234E-SE80 vs MT48LC2M32LFFC-8LIT |
MT48LC2M32LFFC-10 | Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, PLASTIC, FBGA-90 | Micron Technology Inc | K4S643234E-SE80 vs MT48LC2M32LFFC-10 |
IS45S32200L-6BLA1 | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 | Integrated Silicon Solution Inc | K4S643234E-SE80 vs IS45S32200L-6BLA1 |
K4S64323LF-DS1H | Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S643234E-SE80 vs K4S64323LF-DS1H |
IS42VM32200G-10BLE | Synchronous DRAM, 2MX32, 8ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Integrated Silicon Solution Inc | K4S643234E-SE80 vs IS42VM32200G-10BLE |