Datasheets
K4S643233H-FE60 by: Samsung Semiconductor

Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90

Part Details for K4S643233H-FE60 by Samsung Semiconductor

Overview of K4S643233H-FE60 by Samsung Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for K4S643233H-FE60

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K4S643233H-FE60 Part Data Attributes

K4S643233H-FE60 Samsung Semiconductor
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K4S643233H-FE60 Samsung Semiconductor Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Time-Max 5.4 ns
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
JESD-609 Code e0
Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Terminals 90
Number of Words 2097152 words
Number of Words Code 2000000
Operating Temperature-Max 85 °C
Operating Temperature-Min -25 °C
Organization 2MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code FBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 4096
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.0005 A
Supply Current-Max 0.145 mA
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM

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