Datasheets
K4S643233F-DP75 by: Samsung Semiconductor

Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90

Part Details for K4S643233F-DP75 by Samsung Semiconductor

Overview of K4S643233F-DP75 by Samsung Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for K4S643233F-DP75

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K4S643233F-DP75 Part Data Attributes

K4S643233F-DP75 Samsung Semiconductor
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K4S643233F-DP75 Samsung Semiconductor Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description LFBGA, BGA90,9X15,32
Pin Count 90
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
Length 13 mm
Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 2MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.4 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.0005 A
Supply Current-Max 0.135 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 11 mm

Alternate Parts for K4S643233F-DP75

This table gives cross-reference parts and alternative options found for K4S643233F-DP75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S643233F-DP75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4S643233F-SP75 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S643233F-DP75 vs K4S643233F-SP75
Part Number Description Manufacturer Compare
K4S64323LH-HC600 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4S643233F-DP75 vs K4S64323LH-HC600
IS42VS32200E-10BLI Synchronous DRAM, 2MX32, 8ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MINI, FBGA-90 Integrated Silicon Solution Inc K4S643233F-DP75 vs IS42VS32200E-10BLI
K4S64323LF-SP75 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S643233F-DP75 vs K4S64323LF-SP75
K4S64323LF-SG1H Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S643233F-DP75 vs K4S64323LF-SG1H
K4S64323LH-HN600 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4S643233F-DP75 vs K4S64323LH-HN600
K4S643233H-FE600 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S643233F-DP75 vs K4S643233H-FE600
K4S64323LF-SU15 Synchronous DRAM, 2MX32, 9ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S643233F-DP75 vs K4S64323LF-SU15
MT48LC2M32B2B5-7AIT:G Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, VFBGA-90 Micron Technology Inc K4S643233F-DP75 vs MT48LC2M32B2B5-7AIT:G
K4S643233F-DP1L Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S643233F-DP75 vs K4S643233F-DP1L
IS43LR32200B-6BL DDR DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc K4S643233F-DP75 vs IS43LR32200B-6BL

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