Memory
K4S643232F-TC45
Samsung Semiconductor
Description: Synchronous DRAM, 2MX32, 4ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86

Overview of K4S643232F-TC45 by Samsung Semiconductor

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Where used in Applications: Consumer Electronics Internet of Things (IoT) Industrial Automation Computing and Data Storage Renewable Energy Robotics and Drones

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Part Data Attributes for K4S643232F-TC45 by Samsung Semiconductor

K4S643232F-TC45
Samsung Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
TSOP2
Package Description
TSOP2, TSSOP86,.46,20
Pin Count
86
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
4 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
222 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PDSO-G86
JESD-609 Code
e0
Length
22.22 mm
Memory Density
67108864 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Number of Functions
1
Number of Ports
1
Number of Terminals
86
Number of Words
2097152 words
Number of Words Code
2000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
2MX32
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Equivalence Code
TSSOP86,.46,20
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Refresh Cycles
4096
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.002 A
Supply Current-Max
0.18 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Pitch
0.5 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. K4S643232F-TC45
    Samsung Semiconductor
    Synchronous DRAM, 2MX32, 4ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
    VS

Alternate Parts for K4S643232F-TC45

This table gives cross-reference parts and alternative options found for K4S643232F-TC45. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S643232F-TC45, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4S643232E-TC450 Synchronous DRAM, 2MX32, 4ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643232F-TC45 vs K4S643232E-TC450
K4S643232F-TL450 Synchronous DRAM, 2MX32, 4ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643232F-TC45 vs K4S643232F-TL450
HY57V643220CLT-43 Synchronous DRAM, 2MX32, 4ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc K4S643232F-TC45 vs HY57V643220CLT-43
K4S643232E-TL450 Synchronous DRAM, 2MX32, 4ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643232F-TC45 vs K4S643232E-TL450
Part Number Description Manufacturer Compare
IS42S32200AL-10TI Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 Integrated Silicon Solution Inc K4S643232F-TC45 vs IS42S32200AL-10TI
MB81P643287-50FN DDR DRAM, 2MX32, 1.1ns, CMOS, PDSO86, PLASTIC, TSOP2-86 FUJITSU Limited K4S643232F-TC45 vs MB81P643287-50FN
MB81E643242-15FN 2MX32 SYNCHRONOUS DRAM, 8ns, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 FUJITSU Semiconductor Limited K4S643232F-TC45 vs MB81E643242-15FN
MB811643222A-125FN 2MX32 SYNCHRONOUS DRAM, PDSO86, 0.400 INCH, 0.50 MM PITCH, TSOP2-86 FUJITSU Limited K4S643232F-TC45 vs MB811643222A-125FN
VG36643241BT-7 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86 Vanguard International Semiconductor Corporation K4S643232F-TC45 vs VG36643241BT-7
KM432S2020BT-F10 Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643232F-TC45 vs KM432S2020BT-F10
HY57V643220CT-47 Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, TSOP2-86 SK Hynix Inc K4S643232F-TC45 vs HY57V643220CT-47
HY57V643220CLT-47 Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, TSOP2-86 SK Hynix Inc K4S643232F-TC45 vs HY57V643220CLT-47
HY57V643220DST-55 Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc K4S643232F-TC45 vs HY57V643220DST-55
HY57V643220CTP-47 Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc K4S643232F-TC45 vs HY57V643220CTP-47

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