Part Details for K4S643232E-TI70 by Samsung Semiconductor
Overview of K4S643232E-TI70 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for K4S643232E-TI70
K4S643232E-TI70 CAD Models
K4S643232E-TI70 Part Data Attributes
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K4S643232E-TI70
Samsung Semiconductor
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K4S643232E-TI70
Samsung Semiconductor
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | |
| Pin Count | 86 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 143 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G86 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 86 | |
| Number of Words | 2097152 words | |
| Number of Words Code | 2000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -45 °C | |
| Organization | 2MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP86,.46,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.17 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for K4S643232E-TI70
This table gives cross-reference parts and alternative options found for K4S643232E-TI70. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S643232E-TI70, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| W986432DH-7L | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, 0.50 MM PITCH, TSOP2-86 | Winbond Electronics Corp | K4S643232E-TI70 vs W986432DH-7L |
| HY57V653220BLTC-7I | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 | SK Hynix Inc | K4S643232E-TI70 vs HY57V653220BLTC-7I |
| KM432S2030CT-7/F7 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | K4S643232E-TI70 vs KM432S2030CT-7/F7 |
| VG36643241AT-7 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 | Vanguard International Semiconductor Corporation | K4S643232E-TI70 vs VG36643241AT-7 |
| W9864G2EH-7 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, ROHS COMPLIANT, TSOP2-86 | Winbond Electronics Corp | K4S643232E-TI70 vs W9864G2EH-7 |
| K4S643232E-TN70 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | K4S643232E-TI70 vs K4S643232E-TN70 |
| K4S643232C-TC70 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | K4S643232E-TI70 vs K4S643232C-TC70 |
| W9864G2IH-7 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, ROHS COMPLIANT, TSOP2-86 | Winbond Electronics Corp | K4S643232E-TI70 vs W9864G2IH-7 |
| K4S643232E-TP700 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | K4S643232E-TI70 vs K4S643232E-TP700 |
| K4S643232C-TC700 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | K4S643232E-TI70 vs K4S643232C-TC700 |