Part Details for K4S640432E-TC75 by Samsung Semiconductor
Overview of K4S640432E-TC75 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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TC75S102F | Toshiba Electronic Devices & Storage Corporation | Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 |
Part Details for K4S640432E-TC75
K4S640432E-TC75 CAD Models
K4S640432E-TC75 Part Data Attributes
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K4S640432E-TC75
Samsung Semiconductor
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Datasheet
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K4S640432E-TC75
Samsung Semiconductor
Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP54,.46,32 | |
Pin Count | 54 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 133 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G54 | |
JESD-609 Code | e0 | |
Length | 22.22 mm | |
Memory Density | 67108864 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 4 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 16MX4 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP54,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.001 A | |
Supply Current-Max | 0.135 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K4S640432E-TC75
This table gives cross-reference parts and alternative options found for K4S640432E-TC75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S640432E-TC75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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NT56V6650C0T-75B | Nanya Technology Corporation | Check for Price | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, SSOP2-54 | K4S640432E-TC75 vs NT56V6650C0T-75B |
K4S640432H-TL750 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, TSOP2-54 | K4S640432E-TC75 vs K4S640432H-TL750 |
KM44S16030CT-GA | Samsung Semiconductor | Check for Price | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | K4S640432E-TC75 vs KM44S16030CT-GA |
MT48LC16M4A2TG-75AT:G | Micron Technology Inc | Check for Price | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | K4S640432E-TC75 vs MT48LC16M4A2TG-75AT:G |
V54C365404VBT75L | Mosel Vitelic Corporation | Check for Price | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | K4S640432E-TC75 vs V54C365404VBT75L |
V54C365404VDT75L | Mosel Vitelic Corporation | Check for Price | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | K4S640432E-TC75 vs V54C365404VDT75L |
MT48LC16M4A2P-75:GIT | Micron Technology Inc | Check for Price | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | K4S640432E-TC75 vs MT48LC16M4A2P-75:GIT |
HM5264405FTT-75A | Hitachi Ltd | Check for Price | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | K4S640432E-TC75 vs HM5264405FTT-75A |
K4S640432H-UC750 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 | K4S640432E-TC75 vs K4S640432H-UC750 |
MT48LC16M4A2P-7EL:GIT | Micron Technology Inc | Check for Price | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | K4S640432E-TC75 vs MT48LC16M4A2P-7EL:GIT |