Part Details for K4S640432E-TC75 by Samsung Semiconductor
Overview of K4S640432E-TC75 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| TC75S102F | Toshiba Electronic Devices & Storage Corporation | Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 |
Part Details for K4S640432E-TC75
K4S640432E-TC75 CAD Models
K4S640432E-TC75 Part Data Attributes
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K4S640432E-TC75
Samsung Semiconductor
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Datasheet
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K4S640432E-TC75
Samsung Semiconductor
Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 4 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX4 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.135 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for K4S640432E-TC75
This table gives cross-reference parts and alternative options found for K4S640432E-TC75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S640432E-TC75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| KM44S16030CT-GA | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S640432E-TC75 vs KM44S16030CT-GA |
| K4S640432D-TC75 | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S640432E-TC75 vs K4S640432D-TC75 |
| MT48LC16M4A2TG-75AT:G | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | K4S640432E-TC75 vs MT48LC16M4A2TG-75AT:G |
| MT48LC16M4A2P-7EAT:G | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-54 | Micron Technology Inc | K4S640432E-TC75 vs MT48LC16M4A2P-7EAT:G |
| HYB39S64400BT-7.5 | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | K4S640432E-TC75 vs HYB39S64400BT-7.5 |
| HM5264405FTT-75 | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Elpida Memory Inc | K4S640432E-TC75 vs HM5264405FTT-75 |
| HY57V64420HGTP-K | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | K4S640432E-TC75 vs HY57V64420HGTP-K |
| MT48LC16M4A2P-7EL:GIT | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Micron Technology Inc | K4S640432E-TC75 vs MT48LC16M4A2P-7EL:GIT |
| NT56V6650C0T-75B | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, SSOP2-54 | Nanya Technology Corporation | K4S640432E-TC75 vs NT56V6650C0T-75B |
| VG36644041BT-7LA | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | K4S640432E-TC75 vs VG36644041BT-7LA |