Part Details for K4S640432E-TC1H by Samsung Semiconductor
Overview of K4S640432E-TC1H by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Price & Stock for K4S640432E-TC1H
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 5 |
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RFQ |
Part Details for K4S640432E-TC1H
K4S640432E-TC1H CAD Models
K4S640432E-TC1H Part Data Attributes
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K4S640432E-TC1H
Samsung Semiconductor
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Datasheet
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K4S640432E-TC1H
Samsung Semiconductor
Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 100 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 4 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX4 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.125 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for K4S640432E-TC1H
This table gives cross-reference parts and alternative options found for K4S640432E-TC1H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S640432E-TC1H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MB81F64442B-10FN | FUJITSU Limited | Check for Price | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | K4S640432E-TC1H vs MB81F64442B-10FN |
| HY57V64420HGTP-P | SK Hynix Inc | Check for Price | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | K4S640432E-TC1H vs HY57V64420HGTP-P |
| HY57V64420HGLTP-S | SK Hynix Inc | Check for Price | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | K4S640432E-TC1H vs HY57V64420HGLTP-S |
| M2V64S20BTP-7 | Mitsubishi Electric | Check for Price | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | K4S640432E-TC1H vs M2V64S20BTP-7 |
| K4S640432C-TC800 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | K4S640432E-TC1H vs K4S640432C-TC800 |
| HYB39S64400BT-8 | Infineon Technologies AG | Check for Price | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 | K4S640432E-TC1H vs HYB39S64400BT-8 |
| HM5264405TT-80 | Hitachi Ltd | Check for Price | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | K4S640432E-TC1H vs HM5264405TT-80 |
| HY57V644021TC-8 | SK Hynix Inc | Check for Price | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | K4S640432E-TC1H vs HY57V644021TC-8 |
| K4S640432E-TC1L0 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | K4S640432E-TC1H vs K4S640432E-TC1L0 |
| MT48LC16M4A2TG-8CL | Micron Technology Inc | Check for Price | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | K4S640432E-TC1H vs MT48LC16M4A2TG-8CL |