Part Details for K4S56323LF-FC600 by Samsung Semiconductor
Overview of K4S56323LF-FC600 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for K4S56323LF-FC600
K4S56323LF-FC600 CAD Models
K4S56323LF-FC600 Part Data Attributes
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K4S56323LF-FC600
Samsung Semiconductor
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Datasheet
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K4S56323LF-FC600
Samsung Semiconductor
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | BGA | |
Package Description | TFBGA, | |
Pin Count | 90 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.24 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-PBGA-B90 | |
Length | 13 mm | |
Memory Density | 268435456 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 32 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 90 | |
Number of Words | 8388608 words | |
Number of Words Code | 8000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | -25 °C | |
Organization | 8MX32 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Peak Reflow Temperature (Cel) | 240 | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Width | 8 mm |
Alternate Parts for K4S56323LF-FC600
This table gives cross-reference parts and alternative options found for K4S56323LF-FC600. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S56323LF-FC600, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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K4S56323LF-HL600 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4S56323LF-FC600 vs K4S56323LF-HL600 |
K4S56323LF-FR600 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S56323LF-FC600 vs K4S56323LF-FR600 |
IS42RM32800D-75BL | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90 | Integrated Silicon Solution Inc | K4S56323LF-FC600 vs IS42RM32800D-75BL |
EDS2532JEBH-6B-E | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90 | Elpida Memory Inc | K4S56323LF-FC600 vs EDS2532JEBH-6B-E |
K4S56323LF-FL600 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S56323LF-FC600 vs K4S56323LF-FL600 |
IS42RM32800D-75BLI | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90 | Integrated Silicon Solution Inc | K4S56323LF-FC600 vs IS42RM32800D-75BLI |
K4S56323LF-HS600 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4S56323LF-FC600 vs K4S56323LF-HS600 |
K4S56323LF-HN600 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4S56323LF-FC600 vs K4S56323LF-HN600 |
IS42RM32800D-6BL | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MINI, BGA-90 | Integrated Silicon Solution Inc | K4S56323LF-FC600 vs IS42RM32800D-6BL |
K4S56323LF-FE600 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S56323LF-FC600 vs K4S56323LF-FE600 |