Part Details for K4S563233F-HG75 by Samsung Semiconductor
Overview of K4S563233F-HG75 by Samsung Semiconductor
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for K4S563233F-HG75
K4S563233F-HG75 CAD Models
K4S563233F-HG75 Part Data Attributes
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K4S563233F-HG75
Samsung Semiconductor
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Datasheet
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K4S563233F-HG75
Samsung Semiconductor
Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Time-Max | 6 ns | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PBGA-B90 | |
| Memory Density | 268435456 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Number of Terminals | 90 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -25 °C | |
| Organization | 8MX32 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | FBGA | |
| Package Equivalence Code | BGA90,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.0005 A | |
| Supply Current-Max | 0.18 mA | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM |