Part Details for K4S561632D-TL60 by Samsung Semiconductor
Overview of K4S561632D-TL60 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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TL604IP | Rochester Electronics LLC | SPDT, 1 Func, 1 Channel, BIMOS, PDIP8, PACKAGE-8 |
Part Details for K4S561632D-TL60
K4S561632D-TL60 CAD Models
K4S561632D-TL60 Part Data Attributes
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K4S561632D-TL60
Samsung Semiconductor
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Datasheet
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K4S561632D-TL60
Samsung Semiconductor
Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP54,.46,32 | |
Pin Count | 54 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.24 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 166 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G54 | |
JESD-609 Code | e0 | |
Length | 22.22 mm | |
Memory Density | 268435456 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 16MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP54,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.22 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K4S561632D-TL60
This table gives cross-reference parts and alternative options found for K4S561632D-TL60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S561632D-TL60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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K4S561632H-UP600 | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INTCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP-54 | Samsung Semiconductor | K4S561632D-TL60 vs K4S561632H-UP600 |
K4S561632H-TP600 | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INTCH, 0.80 MM PITCH, TSOP-54 | Samsung Semiconductor | K4S561632D-TL60 vs K4S561632H-TP600 |
K4S561632C-TN60 | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S561632D-TL60 vs K4S561632C-TN60 |
K4S561632E-TL600 | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S561632D-TL60 vs K4S561632E-TL600 |
K4S561632E-UL600 | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | Samsung Semiconductor | K4S561632D-TL60 vs K4S561632E-UL600 |
K4S561632H-TI600 | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INTCH, 0.80 MM PITCH, TSOP-54 | Samsung Semiconductor | K4S561632D-TL60 vs K4S561632H-TI600 |
W9825G6JH-5 | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | Winbond Electronics Corp | K4S561632D-TL60 vs W9825G6JH-5 |
K4S561632E-TC600 | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S561632D-TL60 vs K4S561632E-TC600 |
K4S561632C-TP60 | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S561632D-TL60 vs K4S561632C-TP60 |
HYB39S256160DTL-6 | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | K4S561632D-TL60 vs HYB39S256160DTL-6 |