Memory
K4S510632C-TL1H
Samsung Semiconductor
Description: Synchronous DRAM, 128MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

Overview of K4S510632C-TL1H by Samsung Semiconductor

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Where used in Applications: Consumer Electronics Computing and Data Storage

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Part Data Attributes for K4S510632C-TL1H by Samsung Semiconductor

K4S510632C-TL1H
Samsung Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
TSOP2
Package Description
TSOP2, TSOP54,.46,32
Pin Count
54
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.28
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
6 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
100 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PDSO-G54
JESD-609 Code
e0
Length
22.22 mm
Memory Density
536870912 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
4
Number of Functions
1
Number of Ports
1
Number of Terminals
54
Number of Words
134217728 words
Number of Words Code
128000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
128MX4
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Equivalence Code
TSOP54,.46,32
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.004 A
Supply Current-Max
0.21 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. K4S510632C-TL1H
    Samsung Semiconductor
    Synchronous DRAM, 128MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
    VS

Alternate Parts for K4S510632C-TL1H

This table gives cross-reference parts and alternative options found for K4S510632C-TL1H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S510632C-TL1H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4S510632B-TL1H Synchronous DRAM, 128MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510632C-TL1H vs K4S510632B-TL1H
K4S510632C-TC1H Synchronous DRAM, 128MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510632C-TL1H vs K4S510632C-TC1H
K4S510632B-TC1L Synchronous DRAM, 128MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510632C-TL1H vs K4S510632B-TC1L
K4S510632B-TL1L Synchronous DRAM, 128MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510632C-TL1H vs K4S510632B-TL1L
Part Number Description Manufacturer Compare
MT48LC128M4A2TG-75 Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc K4S510632C-TL1H vs MT48LC128M4A2TG-75
MT48LC128M4A2TH-7EL Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, Micron Technology Inc K4S510632C-TL1H vs MT48LC128M4A2TH-7EL
DPSD128MX4WY5-DP-XXN10 Synchronous DRAM, 128MX4, CMOS, PDSO54, STACKED, TSOP2-54 B&B Electronics Manufacturing Company K4S510632C-TL1H vs DPSD128MX4WY5-DP-XXN10
HYB39S512400AT-6 Synchronous DRAM, 128MX4, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG K4S510632C-TL1H vs HYB39S512400AT-6
DPSD128MX4WNY5-DP-XX08 Synchronous DRAM Module, 128MX4, CMOS, PDSO54, STACKED, TSOP2-54 B&B Electronics Manufacturing Company K4S510632C-TL1H vs DPSD128MX4WNY5-DP-XX08
HY57V12420T-K Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc K4S510632C-TL1H vs HY57V12420T-K
MT48LC128M4A2TG-75LIT:C Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc K4S510632C-TL1H vs MT48LC128M4A2TG-75LIT:C
K4S510632C-TC1H Synchronous DRAM, 128MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510632C-TL1H vs K4S510632C-TC1H
K4S510432D-UL750 Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 Samsung Semiconductor K4S510632C-TL1H vs K4S510432D-UL750
DPSD128MX4WNY5-DP-XXN12 Synchronous DRAM, 128MX4, CMOS, PDSO54, STACKED, TSOP2-54 B&B Electronics Manufacturing Company K4S510632C-TL1H vs DPSD128MX4WNY5-DP-XXN12

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