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Memory DRAMs K4S510432B-TC750

Memory
K4S510432B-TC750
Samsung Semiconductor
Description: Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, TSOP-54

Overview of K4S510432B-TC750 by Samsung Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Computing and Data Storage Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Entertainment and Gaming

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Part Data Attributes for K4S510432B-TC750 by Samsung Semiconductor
Parametric Data

K4S510432B-TC750
Samsung Semiconductor
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
TSOP
Package Description
TSOP2,
Pin Count
54
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.28
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
5.4 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PDSO-G54
Length
22.22 mm
Memory Density
536870912 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
4
Number of Functions
1
Number of Ports
1
Number of Terminals
54
Number of Words
134217728 words
Number of Words Code
128000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
128MX4
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
10.16 mm
Want to compare parts?
  1. K4S510432B-TC750
    Samsung Semiconductor
    Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, TSOP-54
    VS

Alternate Parts for K4S510432B-TC750

This table gives cross-reference parts and alternative options found for K4S510432B-TC750. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S510432B-TC750, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT48LC128M4SP-7E:D 128MX4 SYNCHRONOUS DRAM, 5.4ns, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc K4S510432B-TC750 vs MT48LC128M4SP-7E:D
MT48LC128M4STG-7E:D 128MX4 SYNCHRONOUS DRAM, 5.4ns, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc K4S510432B-TC750 vs MT48LC128M4STG-7E:D
MT48LC128M4SP-75:D 128MX4 SYNCHRONOUS DRAM, 5.4ns, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc K4S510432B-TC750 vs MT48LC128M4SP-75:D
MT48LC128M4STG-75:D 128MX4 SYNCHRONOUS DRAM, 5.4ns, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc K4S510432B-TC750 vs MT48LC128M4STG-75:D
MT48LC128M4SP-75:C Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc K4S510432B-TC750 vs MT48LC128M4SP-75:C
TC59SM904AFT-70 IC 128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM Toshiba America Electronic Components K4S510432B-TC750 vs TC59SM904AFT-70
HM5257405BTD-75 Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Hitachi Ltd K4S510432B-TC750 vs HM5257405BTD-75
K4S510432B-UL750 Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Samsung Semiconductor K4S510432B-TC750 vs K4S510432B-UL750
MT48LC128M4P-7E:D Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc K4S510432B-TC750 vs MT48LC128M4P-7E:D
K4S510432B-UC750 Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Samsung Semiconductor K4S510432B-TC750 vs K4S510432B-UC750
Part Number Description Manufacturer Compare
DPSD128MX4WNY5-DP-XX08 Synchronous DRAM Module, 128MX4, CMOS, PDSO54, STACKED, TSOP2-54 B&B Electronics Manufacturing Company K4S510432B-TC750 vs DPSD128MX4WNY5-DP-XX08
HYB39S512400AT-6 Synchronous DRAM, 128MX4, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG K4S510432B-TC750 vs HYB39S512400AT-6
K4H510438B-NLB0 DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54 Samsung Semiconductor K4S510432B-TC750 vs K4H510438B-NLB0
MT48LC128M4SP-75:D 128MX4 SYNCHRONOUS DRAM, 5.4ns, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc K4S510432B-TC750 vs MT48LC128M4SP-75:D
K4S510632D-TL75 Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S510432B-TC750 vs K4S510632D-TL75
HY57V12420T-H Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc K4S510432B-TC750 vs HY57V12420T-H
K4H510438B-NLA20 DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54 Samsung Semiconductor K4S510432B-TC750 vs K4H510438B-NLA20
HY57V12420T-P Synchronous DRAM, 128MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc K4S510432B-TC750 vs HY57V12420T-P
HY57V12420LT-K Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc K4S510432B-TC750 vs HY57V12420LT-K
K4H510438B-VCA20 DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, LEAD FREE, STSOP2-54 Samsung Semiconductor K4S510432B-TC750 vs K4H510438B-VCA20

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