Part Details for K4S283233F-HC1L0 by Samsung Semiconductor
Overview of K4S283233F-HC1L0 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for K4S283233F-HC1L0
K4S283233F-HC1L0 CAD Models
K4S283233F-HC1L0 Part Data Attributes
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K4S283233F-HC1L0
Samsung Semiconductor
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Datasheet
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K4S283233F-HC1L0
Samsung Semiconductor
Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, | |
| Pin Count | 90 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Category CO2 Kg | 12 | |
| Compliance Temperature Grade | Commercial Extended: -25C to +70C | |
| EU RoHS Version | RoHS 2 (2011/65/EU) | |
| Candidate List Date | 2011-06-20 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PBGA-B90 | |
| Length | 13 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | -25 °C | |
| Organization | 4MX32 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8 mm |
Alternate Parts for K4S283233F-HC1L0
This table gives cross-reference parts and alternative options found for K4S283233F-HC1L0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S283233F-HC1L0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4S283233F-FC1L0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S283233F-HC1L0 vs K4S283233F-FC1L0 |
| K4S283233F-HL1L0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4S283233F-HC1L0 vs K4S283233F-HL1L0 |
| K4S283233F-FN1L0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S283233F-HC1L0 vs K4S283233F-FN1L0 |
| K4S283233F-FF1L0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S283233F-HC1L0 vs K4S283233F-FF1L0 |
| K4S283233F-HN1H0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4S283233F-HC1L0 vs K4S283233F-HN1H0 |
| K4S283233F-FE1H0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S283233F-HC1L0 vs K4S283233F-FE1H0 |
| K4S283233F-FG1H0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S283233F-HC1L0 vs K4S283233F-FG1H0 |
| K4S283233F-FG1L0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4S283233F-HC1L0 vs K4S283233F-FG1L0 |
| K4S283233F-HG1H0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4S283233F-HC1L0 vs K4S283233F-HG1H0 |
| K4S283233F-HN1L0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4S283233F-HC1L0 vs K4S283233F-HN1L0 |