Memory
K4S283233F-FF1L0
Samsung Semiconductor
Description: Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90

Overview of K4S283233F-FF1L0 by Samsung Semiconductor

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Part Data Attributes for K4S283233F-FF1L0 by Samsung Semiconductor

K4S283233F-FF1L0
Samsung Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
Package Description
TFBGA,
Pin Count
90
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
7 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B90
Length
13 mm
Memory Density
134217728 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Number of Functions
1
Number of Ports
1
Number of Terminals
90
Number of Words
4194304 words
Number of Words Code
4000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
-25 °C
Organization
4MX32
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
240
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
Supply Voltage-Nom (Vsup)
3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
OTHER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
30
Width
8 mm
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  1. K4S283233F-FF1L0
    Samsung Semiconductor
    Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90
    VS

Alternate Parts for K4S283233F-FF1L0

This table gives cross-reference parts and alternative options found for K4S283233F-FF1L0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S283233F-FF1L0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4S283233F-FG1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S283233F-FF1L0 vs K4S283233F-FG1L0
K4S283233F-FN1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S283233F-FF1L0 vs K4S283233F-FN1H0
K4S283233F-FN1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S283233F-FF1L0 vs K4S283233F-FN1L0
K4S283233F-FG1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S283233F-FF1L0 vs K4S283233F-FG1H0
K4S283233F-FC1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S283233F-FF1L0 vs K4S283233F-FC1L0
K4S283233F-HC1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4S283233F-FF1L0 vs K4S283233F-HC1H0
K4S283233F-FE1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S283233F-FF1L0 vs K4S283233F-FE1L0
K4S283233F-HG1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4S283233F-FF1L0 vs K4S283233F-HG1H0
K4S283233F-FL1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S283233F-FF1L0 vs K4S283233F-FL1L0
K4S283233F-FF1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S283233F-FF1L0 vs K4S283233F-FF1H0
Part Number Description Manufacturer Compare
K4M56323LE-ML1H0 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 Samsung Semiconductor K4S283233F-FF1L0 vs K4M56323LE-ML1H0
HY5MS7B2LFP-H DDR DRAM, 8MX32, 6.5ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-90 SK Hynix Inc K4S283233F-FF1L0 vs HY5MS7B2LFP-H
HY5V52CLF-S Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 SK Hynix Inc K4S283233F-FF1L0 vs HY5V52CLF-S
MT46H8M32LGB5-75:H DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc K4S283233F-FF1L0 vs MT46H8M32LGB5-75:H
IS42LS32400AL-7BL Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Integrated Silicon Solution Inc K4S283233F-FF1L0 vs IS42LS32400AL-7BL
MT46H8M32LFB5-6L:A DDR DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc K4S283233F-FF1L0 vs MT46H8M32LFB5-6L:A
K4S28323LE-SE1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 Samsung Semiconductor K4S283233F-FF1L0 vs K4S28323LE-SE1H0
K4M56323LD-EP80 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S283233F-FF1L0 vs K4M56323LD-EP80
K4S283233E-HG1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor K4S283233F-FF1L0 vs K4S283233E-HG1H0
K4S563233F-FG1L0 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S283233F-FF1L0 vs K4S563233F-FG1L0

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