Datasheets
K4M56323LE-MS800 by: Samsung Semiconductor

Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90

Part Details for K4M56323LE-MS800 by Samsung Semiconductor

Overview of K4M56323LE-MS800 by Samsung Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for K4M56323LE-MS800

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K4M56323LE-MS800 Part Data Attributes

K4M56323LE-MS800 Samsung Semiconductor
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K4M56323LE-MS800 Samsung Semiconductor Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description LFBGA,
Pin Count 90
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B90
Length 13 mm
Memory Density 268435456 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -25 °C
Organization 8MX32
Package Body Material PLASTIC/EPOXY
Package Code LFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 11 mm

Alternate Parts for K4M56323LE-MS800

This table gives cross-reference parts and alternative options found for K4M56323LE-MS800. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4M56323LE-MS800, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4M56323LE-MN800 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 Samsung Semiconductor K4M56323LE-MS800 vs K4M56323LE-MN800
K4M56323LE-ME800 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 Samsung Semiconductor K4M56323LE-MS800 vs K4M56323LE-ME800
K4M56323LE-ES800 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 Samsung Semiconductor K4M56323LE-MS800 vs K4M56323LE-ES800
K4M56323LE-MC800 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 Samsung Semiconductor K4M56323LE-MS800 vs K4M56323LE-MC800
K4M56323LE-MR800 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 Samsung Semiconductor K4M56323LE-MS800 vs K4M56323LE-MR800
K4M56323LE-EN800 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 Samsung Semiconductor K4M56323LE-MS800 vs K4M56323LE-EN800
K4M56323LE-ML800 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 Samsung Semiconductor K4M56323LE-MS800 vs K4M56323LE-ML800
Part Number Description Manufacturer Compare
K4M563233E-EG1H0 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4M56323LE-MS800 vs K4M563233E-EG1H0
K4M28323PH-HG1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90 Samsung Semiconductor K4M56323LE-MS800 vs K4M28323PH-HG1L0
K4M56323PG-HF900 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4M56323LE-MS800 vs K4M56323PG-HF900
K4S56323PF-HG900 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4M56323LE-MS800 vs K4S56323PF-HG900
K4S28323LE-FS1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90 Samsung Semiconductor K4M56323LE-MS800 vs K4S28323LE-FS1H0
MT46H8M32LFB5-5IT:H DDR DRAM, 8MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc K4M56323LE-MS800 vs MT46H8M32LFB5-5IT:H
HY5W2A2F-B Synchronous DRAM, 4MX32, 9ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 SK Hynix Inc K4M56323LE-MS800 vs HY5W2A2F-B
K4M28323LH-HG750 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4M56323LE-MS800 vs K4M28323LH-HG750
MT46H8M32LFB5-75IT:H DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc K4M56323LE-MS800 vs MT46H8M32LFB5-75IT:H
K4S283234F-MN1L Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, CSP, FBGA-90 Samsung Semiconductor K4M56323LE-MS800 vs K4S283234F-MN1L

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